Bilayer-based antiferroelectric HfZrO2tunneling junction with high tunneling electroresistance and multilevel nonvolatile memory

K. Y. Hsiang, C. Y. Liao, J. H. Liu, J. F. Wang, S. H. Chiang, S. H. Chang, F. C. Hsieh, H. Liang, C. Y. Lin, Z. F. Lou, T. H. Hou, C. W. Liu, M. H. Lee*

*Corresponding author for this work

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