Bias- and temperature-assisted trapping/de-trapping of RON degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate

Jin Ming Zhang; Ting En Hsieh; Tian-Li Wu; Szu Hao Chen; Shi Xuan Chen; Po Chien Chou; Edward Yi Chang

doi:10.1109/IPFA.2017.8060181

Bias- and temperature-assisted trapping/de-trapping of RON degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate

Jin Ming Zhang, Ting En Hsieh, Tian-Li Wu, Szu Hao Chen, Shi Xuan Chen, Po Chien Chou, Edward Yi Chang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

In this study, we investigate the RON degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate via an accelerated step stress at different temperatures. We have observed a three-phase RON degradation behavior, which is highly correlated with a drain bias and back gate bias. First, the RON degradation increases till a peak value when the drain bias increases. Second, when the drain bias increases further, the RON degradation is reduced. Third, the RON degradation slowly increases again. RON degradation is characterized with different temperatures, the results show that 1) high temperature leads to a smaller RON degradation compared to the result at room temperature and 2) high temperature shifts the peak of the RON degradation at a lower drain bias. A possible mechanism that the trapping and de-trapping could occur due to the high temperature and high drain bias is proposed to explain the observed results.

Original language	English
Title of host publication	24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-4
Number of pages	4
ISBN (Electronic)	9781538617793
DOIs	https://doi.org/10.1109/IPFA.2017.8060181
State	Published - 5 Oct 2017
Event	24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017 - Chengdu, China Duration: 4 Jul 2017 → 7 Jul 2017

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume	2017-July

Conference

Conference	24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
Country/Territory	China
City	Chengdu
Period	4/07/17 → 7/07/17

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10.1109/IPFA.2017.8060181

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Zhang, J. M., Hsieh, T. E., Wu, T.-L., Chen, S. H., Chen, S. X., Chou, P. C., & Chang, E. Y. (2017). Bias- and temperature-assisted trapping/de-trapping of RON degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate. In 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017 (pp. 1-4). (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2017-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2017.8060181

Zhang, Jin Ming ; Hsieh, Ting En ; Wu, Tian-Li et al. / Bias- and temperature-assisted trapping/de-trapping of RON degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate. 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1-4 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{a8b21725bea946ffb396070c0c260c6d,

title = "Bias- and temperature-assisted trapping/de-trapping of RON degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate",

abstract = "In this study, we investigate the RON degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate via an accelerated step stress at different temperatures. We have observed a three-phase RON degradation behavior, which is highly correlated with a drain bias and back gate bias. First, the RON degradation increases till a peak value when the drain bias increases. Second, when the drain bias increases further, the RON degradation is reduced. Third, the RON degradation slowly increases again. RON degradation is characterized with different temperatures, the results show that 1) high temperature leads to a smaller RON degradation compared to the result at room temperature and 2) high temperature shifts the peak of the RON degradation at a lower drain bias. A possible mechanism that the trapping and de-trapping could occur due to the high temperature and high drain bias is proposed to explain the observed results.",

author = "Zhang, {Jin Ming} and Hsieh, {Ting En} and Tian-Li Wu and Chen, {Szu Hao} and Chen, {Shi Xuan} and Chou, {Po Chien} and Chang, {Edward Yi}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017 ; Conference date: 04-07-2017 Through 07-07-2017",

year = "2017",

month = oct,

day = "5",

doi = "10.1109/IPFA.2017.8060181",

language = "English",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1--4",

booktitle = "24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017",

address = "美國",

}

Zhang, JM, Hsieh, TE, Wu, T-L, Chen, SH, Chen, SX, Chou, PC & Chang, EY 2017, Bias- and temperature-assisted trapping/de-trapping of RON degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate. in 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, vol. 2017-July, Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017, Chengdu, China, 4/07/17. https://doi.org/10.1109/IPFA.2017.8060181

Bias- and temperature-assisted trapping/de-trapping of RON degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate. / Zhang, Jin Ming; Hsieh, Ting En; Wu, Tian-Li et al.
24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-4 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2017-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Bias- and temperature-assisted trapping/de-trapping of RON degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate

AU - Zhang, Jin Ming

AU - Hsieh, Ting En

AU - Wu, Tian-Li

AU - Chen, Szu Hao

AU - Chen, Shi Xuan

AU - Chou, Po Chien

AU - Chang, Edward Yi

PY - 2017/10/5

Y1 - 2017/10/5

N2 - In this study, we investigate the RON degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate via an accelerated step stress at different temperatures. We have observed a three-phase RON degradation behavior, which is highly correlated with a drain bias and back gate bias. First, the RON degradation increases till a peak value when the drain bias increases. Second, when the drain bias increases further, the RON degradation is reduced. Third, the RON degradation slowly increases again. RON degradation is characterized with different temperatures, the results show that 1) high temperature leads to a smaller RON degradation compared to the result at room temperature and 2) high temperature shifts the peak of the RON degradation at a lower drain bias. A possible mechanism that the trapping and de-trapping could occur due to the high temperature and high drain bias is proposed to explain the observed results.

AB - In this study, we investigate the RON degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate via an accelerated step stress at different temperatures. We have observed a three-phase RON degradation behavior, which is highly correlated with a drain bias and back gate bias. First, the RON degradation increases till a peak value when the drain bias increases. Second, when the drain bias increases further, the RON degradation is reduced. Third, the RON degradation slowly increases again. RON degradation is characterized with different temperatures, the results show that 1) high temperature leads to a smaller RON degradation compared to the result at room temperature and 2) high temperature shifts the peak of the RON degradation at a lower drain bias. A possible mechanism that the trapping and de-trapping could occur due to the high temperature and high drain bias is proposed to explain the observed results.

UR - http://www.scopus.com/inward/record.url?scp=85045044344&partnerID=8YFLogxK

U2 - 10.1109/IPFA.2017.8060181

DO - 10.1109/IPFA.2017.8060181

M3 - Conference contribution

AN - SCOPUS:85045044344

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

SP - 1

EP - 4

BT - 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017

Y2 - 4 July 2017 through 7 July 2017

ER -

Zhang JM, Hsieh TE, Wu TL, Chen SH, Chen SX, Chou PC et al. Bias- and temperature-assisted trapping/de-trapping of RON degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate. In 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1-4. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2017.8060181

Bias- and temperature-assisted trapping/de-trapping of RON degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate

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