Beyond Substrates: Strain Engineering of Ferroelectric Membranes

Keyphrases

• Capacitors 33%
• CMOS Technology 33%
• Coercive Field 33%
• Crystal Quality 33%
• Deterministic Control 33%
• Dielectric Permittivity 33%
• Engineered Substrate 33%
• Epitaxial Growth 33%
• Epitaxial Lift-off 33%
• Ferroelectric BaTiO3 33%
• Ferroelectric Domain Dynamics 33%
• Ferroelectric Membrane 100%
• Ferroelectric Memory 33%
• Ferroelectric Oxides 33%
• Ferroelectric Switching Dynamics 33%
• Flexible Nanosensor 33%
• Flexible Polymer 33%
• High-crystalline 33%
• Interlayer Stress 66%
• Material Phase 33%
• Material Properties 33%
• Material Structure 33%
• Mechanical Tunability 33%
• Metal Structure 33%
• Ordering Temperature 33%
• Oxide Metal 66%
• Perovskite Oxide 33%
• Room Temperature 33%
• Strain Engineering 100%
• Strain State 33%
• Structural Tuning 33%
• Structure Phase 33%
• Structure-property Relationships 33%
• Substrate Clamping 33%
• Substrate Strain 100%
• Switching Time 33%
• Thick Film 33%
• Trilayer 33%
• Ultrafast 33%
• Ultrasensitive 33%

Engineering

• Coercive Field 50%
• Crystalline Quality 50%
• Dielectrics 50%
• Engineering Strain 100%
• Integrated Circuit 100%
• Interlayer 100%
• Nanoscale 50%
• Nanosensor 50%
• Phase Structure 50%
• Released Membrane 50%
• Room Temperature 50%
• Strain State 50%
• Switching Time 50%

Material Science

• Capacitor 20%
• Epitaxy 20%
• Ferroelectric Material 100%
• Film 20%
• Materials Property 20%
• Materials Structure 20%
• Metal Oxide 40%
• Oxide Compound 20%
• Permittivity 20%
• Silicon 20%
• Thick Films 20%