Skip to main navigation Skip to search Skip to main content

BEOL-Compatible multiple metal-ferroelectric-metal (m-MFM) FETs designed for low voltage (2.5 V), high density, and excellent reliability

  • Meng Hui Yan
  • , Ming Hung Wu
  • , Hsin Hui Huang
  • , Yu Hao Chen
  • , Yueh Hua Chu
  • , Tian-Li Wu
  • , Po Chun Yeh
  • , Chih Yao Wang
  • , Yu De Lin
  • , Jian Wei Su
  • , Pei Jer Tzeng
  • , Shyh Shyuan Sheu
  • , Wei Chung Lo
  • , Chih I. Wu
  • , Tuo-Hung Hou*
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

19 Scopus citations

Fingerprint

Dive into the research topics of 'BEOL-Compatible multiple metal-ferroelectric-metal (m-MFM) FETs designed for low voltage (2.5 V), high density, and excellent reliability'. Together they form a unique fingerprint.
Sort by

Keyphrases

Material Science

Engineering