BEOL-Compatible multiple metal-ferroelectric-metal (m-MFM) FETs designed for low voltage (2.5 V), high density, and excellent reliability

Meng Hui Yan; Ming Hung Wu; Hsin Hui Huang; Yu Hao Chen; Yueh Hua Chu; Tian-Li Wu; Po Chun Yeh; Chih Yao Wang; Yu De Lin; Jian Wei Su; Pei Jer Tzeng; Shyh Shyuan Sheu; Wei Chung Lo; Chih I. Wu; Tuo-Hung Hou

doi:10.1109/IEDM13553.2020.9371916

BEOL-Compatible multiple metal-ferroelectric-metal (m-MFM) FETs designed for low voltage (2.5 V), high density, and excellent reliability

Meng Hui Yan, Ming Hung Wu, Hsin Hui Huang, Yu Hao Chen, Yueh Hua Chu, Tian-Li Wu, Po Chun Yeh, Chih Yao Wang, Yu De Lin, Jian Wei Su, Pei Jer Tzeng, Shyh Shyuan Sheu, Wei Chung Lo, Chih I. Wu, Tuo-Hung Hou^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

15 Scopus citations

Abstract

An experiment-calibrated SPICE model considering dynamic ferroelectric switching and charge injection is established to co-optimize memory window, write speed, endurance, and retention of MFMFET where a standard BEOL HfZrOx MFM capacitor is stacked on top of the logic transistor. This promising SOC-compatible, low-power and low-voltage embedded memory achieves a high current on-off ratio > 104 when programming at ±2.5 V for 3 μs without compromising 10-year retention and MFM-equivalent endurance. A novel m-MFMFET utilizing multiple MFMs is also proposed. m-MFMFET achieves equivalent performance as the standard MFMFET but further reduces the unit cell size by 22 %.

Original language	English
Title of host publication	2020 IEEE International Electron Devices Meeting, IEDM 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	4.6.1-4.6.4
Number of pages	4
ISBN (Electronic)	9781728188881
DOIs	https://doi.org/10.1109/IEDM13553.2020.9371916
State	Published - 12 Dec 2020
Event	66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States Duration: 12 Dec 2020 → 18 Dec 2020

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2020-December
ISSN (Print)	0163-1918

Conference

Conference	66th Annual IEEE International Electron Devices Meeting, IEDM 2020
Country/Territory	United States
City	Virtual, San Francisco
Period	12/12/20 → 18/12/20

Access to Document

10.1109/IEDM13553.2020.9371916

Cite this

Yan, M. H., Wu, M. H., Huang, H. H., Chen, Y. H., Chu, Y. H., Wu, T.-L., Yeh, P. C., Wang, C. Y., Lin, Y. D., Su, J. W., Tzeng, P. J., Sheu, S. S., Lo, W. C., Wu, C. I., & Hou, T.-H. (2020). BEOL-Compatible multiple metal-ferroelectric-metal (m-MFM) FETs designed for low voltage (2.5 V), high density, and excellent reliability. In 2020 IEEE International Electron Devices Meeting, IEDM 2020 (pp. 4.6.1-4.6.4). Article 9371916 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2020-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM13553.2020.9371916

Yan, Meng Hui ; Wu, Ming Hung ; Huang, Hsin Hui et al. / BEOL-Compatible multiple metal-ferroelectric-metal (m-MFM) FETs designed for low voltage (2.5 V), high density, and excellent reliability. 2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 4.6.1-4.6.4 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{4315418181ca4320bd20e8ba4d778ccf,

title = "BEOL-Compatible multiple metal-ferroelectric-metal (m-MFM) FETs designed for low voltage (2.5 V), high density, and excellent reliability",

abstract = "An experiment-calibrated SPICE model considering dynamic ferroelectric switching and charge injection is established to co-optimize memory window, write speed, endurance, and retention of MFMFET where a standard BEOL HfZrOx MFM capacitor is stacked on top of the logic transistor. This promising SOC-compatible, low-power and low-voltage embedded memory achieves a high current on-off ratio > 104 when programming at ±2.5 V for 3 μs without compromising 10-year retention and MFM-equivalent endurance. A novel m-MFMFET utilizing multiple MFMs is also proposed. m-MFMFET achieves equivalent performance as the standard MFMFET but further reduces the unit cell size by 22 %.",

author = "Yan, {Meng Hui} and Wu, {Ming Hung} and Huang, {Hsin Hui} and Chen, {Yu Hao} and Chu, {Yueh Hua} and Tian-Li Wu and Yeh, {Po Chun} and Wang, {Chih Yao} and Lin, {Yu De} and Su, {Jian Wei} and Tzeng, {Pei Jer} and Sheu, {Shyh Shyuan} and Lo, {Wei Chung} and Wu, {Chih I.} and Tuo-Hung Hou",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 66th Annual IEEE International Electron Devices Meeting, IEDM 2020 ; Conference date: 12-12-2020 Through 18-12-2020",

year = "2020",

month = dec,

day = "12",

doi = "10.1109/IEDM13553.2020.9371916",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "4.6.1--4.6.4",

booktitle = "2020 IEEE International Electron Devices Meeting, IEDM 2020",

address = "美國",

}

Yan, MH, Wu, MH, Huang, HH, Chen, YH, Chu, YH, Wu, T-L, Yeh, PC, Wang, CY, Lin, YD, Su, JW, Tzeng, PJ, Sheu, SS, Lo, WC, Wu, CI & Hou, T-H 2020, BEOL-Compatible multiple metal-ferroelectric-metal (m-MFM) FETs designed for low voltage (2.5 V), high density, and excellent reliability. in 2020 IEEE International Electron Devices Meeting, IEDM 2020., 9371916, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2020-December, Institute of Electrical and Electronics Engineers Inc., pp. 4.6.1-4.6.4, 66th Annual IEEE International Electron Devices Meeting, IEDM 2020, Virtual, San Francisco, United States, 12/12/20. https://doi.org/10.1109/IEDM13553.2020.9371916

BEOL-Compatible multiple metal-ferroelectric-metal (m-MFM) FETs designed for low voltage (2.5 V), high density, and excellent reliability. / Yan, Meng Hui; Wu, Ming Hung; Huang, Hsin Hui et al.
2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 4.6.1-4.6.4 9371916 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2020-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - BEOL-Compatible multiple metal-ferroelectric-metal (m-MFM) FETs designed for low voltage (2.5 V), high density, and excellent reliability

AU - Yan, Meng Hui

AU - Wu, Ming Hung

AU - Huang, Hsin Hui

AU - Chen, Yu Hao

AU - Chu, Yueh Hua

AU - Wu, Tian-Li

AU - Yeh, Po Chun

AU - Wang, Chih Yao

AU - Lin, Yu De

AU - Su, Jian Wei

AU - Tzeng, Pei Jer

AU - Sheu, Shyh Shyuan

AU - Lo, Wei Chung

AU - Wu, Chih I.

AU - Hou, Tuo-Hung

PY - 2020/12/12

Y1 - 2020/12/12

N2 - An experiment-calibrated SPICE model considering dynamic ferroelectric switching and charge injection is established to co-optimize memory window, write speed, endurance, and retention of MFMFET where a standard BEOL HfZrOx MFM capacitor is stacked on top of the logic transistor. This promising SOC-compatible, low-power and low-voltage embedded memory achieves a high current on-off ratio > 104 when programming at ±2.5 V for 3 μs without compromising 10-year retention and MFM-equivalent endurance. A novel m-MFMFET utilizing multiple MFMs is also proposed. m-MFMFET achieves equivalent performance as the standard MFMFET but further reduces the unit cell size by 22 %.

AB - An experiment-calibrated SPICE model considering dynamic ferroelectric switching and charge injection is established to co-optimize memory window, write speed, endurance, and retention of MFMFET where a standard BEOL HfZrOx MFM capacitor is stacked on top of the logic transistor. This promising SOC-compatible, low-power and low-voltage embedded memory achieves a high current on-off ratio > 104 when programming at ±2.5 V for 3 μs without compromising 10-year retention and MFM-equivalent endurance. A novel m-MFMFET utilizing multiple MFMs is also proposed. m-MFMFET achieves equivalent performance as the standard MFMFET but further reduces the unit cell size by 22 %.

UR - http://www.scopus.com/inward/record.url?scp=85102921157&partnerID=8YFLogxK

U2 - 10.1109/IEDM13553.2020.9371916

DO - 10.1109/IEDM13553.2020.9371916

M3 - Conference contribution

AN - SCOPUS:85102921157

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 4.6.1-4.6.4

BT - 2020 IEEE International Electron Devices Meeting, IEDM 2020

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 66th Annual IEEE International Electron Devices Meeting, IEDM 2020

Y2 - 12 December 2020 through 18 December 2020

ER -

Yan MH, Wu MH, Huang HH, Chen YH, Chu YH, Wu TL et al. BEOL-Compatible multiple metal-ferroelectric-metal (m-MFM) FETs designed for low voltage (2.5 V), high density, and excellent reliability. In 2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 4.6.1-4.6.4. 9371916. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM13553.2020.9371916

BEOL-Compatible multiple metal-ferroelectric-metal (m-MFM) FETs designed for low voltage (2.5 V), high density, and excellent reliability

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