BEOL-Compatible multiple metal-ferroelectric-metal (m-MFM) FETs designed for low voltage (2.5 V), high density, and excellent reliability

Meng Hui Yan, Ming Hung Wu, Hsin Hui Huang, Yu Hao Chen, Yueh Hua Chu, Tian-Li Wu, Po Chun Yeh, Chih Yao Wang, Yu De Lin, Jian Wei Su, Pei Jer Tzeng, Shyh Shyuan Sheu, Wei Chung Lo, Chih I. Wu, Tuo-Hung Hou*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

13 Scopus citations

Abstract

An experiment-calibrated SPICE model considering dynamic ferroelectric switching and charge injection is established to co-optimize memory window, write speed, endurance, and retention of MFMFET where a standard BEOL HfZrOx MFM capacitor is stacked on top of the logic transistor. This promising SOC-compatible, low-power and low-voltage embedded memory achieves a high current on-off ratio > 104 when programming at ±2.5 V for 3 μs without compromising 10-year retention and MFM-equivalent endurance. A novel m-MFMFET utilizing multiple MFMs is also proposed. m-MFMFET achieves equivalent performance as the standard MFMFET but further reduces the unit cell size by 22 %.

Original languageEnglish
Title of host publication2020 IEEE International Electron Devices Meeting, IEDM 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages4.6.1-4.6.4
Number of pages4
ISBN (Electronic)9781728188881
DOIs
StatePublished - 12 Dec 2020
Event66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States
Duration: 12 Dec 202018 Dec 2020

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2020-December
ISSN (Print)0163-1918

Conference

Conference66th Annual IEEE International Electron Devices Meeting, IEDM 2020
Country/TerritoryUnited States
CityVirtual, San Francisco
Period12/12/2018/12/20

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