@inproceedings{00a7da1629274298916fd05fa4ace9eb,
title = "BEOL-Compatible Ferroelectric Capacitor with Excellent Endurance and Retention by Improving Interface Quality",
abstract = "In this paper, we have successfully fabricated a metal-ferroelectricity-metal (MFM) capacitor of an ultrathin 6.5 nm HZO utilizing Molybdenum (Mo) as the electrodes. We propose a novel atomic layer deposition (ALD) scheme to overcome the challenge of oxidation of the bottom Mo electrode. The fabricated sample annealed at 400 °C demonstrated a 2Pr value of 54.3 μ C/cm2 at an operating voltage of 2V, which meets the stringent requirements of Back-End-of-Line (BEOL) integration. Furthermore, in endurance testing, the sample maintained a 2Pr value of 52.2 μ C/cm2 even after 1010 cycles (▵ 2 Pr/2Prpristme≈ 4% from pristine to 1010 cycles).",
author = "Teng, {Li Cheng} and Huang, {Yu Che} and Wang, {Shin Yuan} and Lin, {Yu Hsien} and Chien, {Chao Hsin}",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 ; Conference date: 22-04-2024 Through 25-04-2024",
year = "2024",
doi = "10.1109/VLSITSA60681.2024.10546363",
language = "English",
series = "2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 - Proceedings",
address = "United States",
}