BEOL-Compatible Ferroelectric Capacitor with Excellent Endurance and Retention by Improving Interface Quality

Li Cheng Teng, Yu Che Huang, Shin Yuan Wang, Yu Hsien Lin, Chao Hsin Chien*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, we have successfully fabricated a metal-ferroelectricity-metal (MFM) capacitor of an ultrathin 6.5 nm HZO utilizing Molybdenum (Mo) as the electrodes. We propose a novel atomic layer deposition (ALD) scheme to overcome the challenge of oxidation of the bottom Mo electrode. The fabricated sample annealed at 400 °C demonstrated a 2Pr value of 54.3 μ C/cm2 at an operating voltage of 2V, which meets the stringent requirements of Back-End-of-Line (BEOL) integration. Furthermore, in endurance testing, the sample maintained a 2Pr value of 52.2 μ C/cm2 even after 1010 cycles (▵ 2 Pr/2Prpristme≈ 4% from pristine to 1010 cycles).

Original languageEnglish
Title of host publication2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350360349
DOIs
StatePublished - 2024
Event2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 - Hsinchu, Taiwan
Duration: 22 Apr 202425 Apr 2024

Publication series

Name2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 - Proceedings

Conference

Conference2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024
Country/TerritoryTaiwan
CityHsinchu
Period22/04/2425/04/24

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