In this letter, we certify that the compressive SiN capping layer has more potential than the tensile layer for fabrication using the stress memorization technique to enhance NMOS mobility. The mechanism that we have proposed implies that the conventional choice of the capping layer should be modulated from the point of view of stress shift rather than using the highest tensile film.
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|State||Published - 1 Apr 2010|
- Contact etch-stop layer (CESL)
- Poly amorphization implantation (PAI)
- Stress memorization technique (SMT)