Benefit of NMOS by compressive SiN as stress memorization technique and its mechanism

Chia Chun Liao; Tsung Yu Chiang; Min Chen Lin; Tien-Sheng Chao

doi:10.1109/LED.2010.2041524

Benefit of NMOS by compressive SiN as stress memorization technique and its mechanism

Chia Chun Liao^*, Tsung Yu Chiang, Min Chen Lin, Tien-Sheng Chao

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

In this letter, we certify that the compressive SiN capping layer has more potential than the tensile layer for fabrication using the stress memorization technique to enhance NMOS mobility. The mechanism that we have proposed implies that the conventional choice of the capping layer should be modulated from the point of view of stress shift rather than using the highest tensile film.

Original language	English
Article number	11
Pages (from-to)	281-283
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	4
DOIs	https://doi.org/10.1109/LED.2010.2041524
State	Published - 1 Apr 2010

Keywords

Contact etch-stop layer (CESL)
Poly amorphization implantation (PAI)
Strain
Stress memorization technique (SMT)

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10.1109/LED.2010.2041524

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abstract = "In this letter, we certify that the compressive SiN capping layer has more potential than the tensile layer for fabrication using the stress memorization technique to enhance NMOS mobility. The mechanism that we have proposed implies that the conventional choice of the capping layer should be modulated from the point of view of stress shift rather than using the highest tensile film.",

keywords = "Contact etch-stop layer (CESL), Poly amorphization implantation (PAI), Strain, Stress memorization technique (SMT)",

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AU - Lin, Min Chen

AU - Chao, Tien-Sheng

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N2 - In this letter, we certify that the compressive SiN capping layer has more potential than the tensile layer for fabrication using the stress memorization technique to enhance NMOS mobility. The mechanism that we have proposed implies that the conventional choice of the capping layer should be modulated from the point of view of stress shift rather than using the highest tensile film.

AB - In this letter, we certify that the compressive SiN capping layer has more potential than the tensile layer for fabrication using the stress memorization technique to enhance NMOS mobility. The mechanism that we have proposed implies that the conventional choice of the capping layer should be modulated from the point of view of stress shift rather than using the highest tensile film.

KW - Contact etch-stop layer (CESL)

KW - Poly amorphization implantation (PAI)

KW - Strain

KW - Stress memorization technique (SMT)

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Benefit of NMOS by compressive SiN as stress memorization technique and its mechanism

Abstract

Keywords

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