Beam profile characteristics of InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs

Hung Pin D Yang; I. Chen Hsu; Fang I. Lai; Kuo-Jui Lin; Ru Shang Hsiao; Nikolai A. Maleev; Sergej A. Blokhin; Hao-Chung Kuo; Jim Y. Chi

doi:10.1016/j.optcom.2007.01.063

Beam profile characteristics of InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs

Hung Pin D Yang^*, I. Chen Hsu, Fang I. Lai, Kuo-Jui Lin, Ru Shang Hsiao, Nikolai A. Maleev, Sergej A. Blokhin, Hao-Chung Kuo, Jim Y. Chi

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

An InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fiber-optic applications is first time demonstrated. The active region of the device contains 3 InGaAs SML QD layers. Each of the InGaAs SML QD layer is formed by alternate deposition of InAs (<1 ML) and GaAs. Single fundamental mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. Side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over entire current operation range. The beam profile study of the PhC-VCSEL indicates that the laser beam is well confined by the photonic crystal structure of the device. The divergence angle of the devices remains almost unchanged with increasing current.

Original language	English
Pages (from-to)	94-99
Number of pages	6
Journal	Optics Communications
Volume	274
Issue number	1
DOIs	https://doi.org/10.1016/j.optcom.2007.01.063
State	Published - 1 Jun 2007

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@article{1fe5eb23b44c498e80d9b0b680bf1efe,

title = "Beam profile characteristics of InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs",

abstract = "An InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fiber-optic applications is first time demonstrated. The active region of the device contains 3 InGaAs SML QD layers. Each of the InGaAs SML QD layer is formed by alternate deposition of InAs (<1 ML) and GaAs. Single fundamental mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. Side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over entire current operation range. The beam profile study of the PhC-VCSEL indicates that the laser beam is well confined by the photonic crystal structure of the device. The divergence angle of the devices remains almost unchanged with increasing current.",

author = "Yang, {Hung Pin D} and Hsu, {I. Chen} and Lai, {Fang I.} and Kuo-Jui Lin and Hsiao, {Ru Shang} and Maleev, {Nikolai A.} and Blokhin, {Sergej A.} and Hao-Chung Kuo and Chi, {Jim Y.}",

year = "2007",

month = jun,

day = "1",

doi = "10.1016/j.optcom.2007.01.063",

language = "English",

volume = "274",

pages = "94--99",

journal = "Optics Communications",

issn = "0030-4018",

publisher = "Elsevier B.V.",

number = "1",

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TY - JOUR

T1 - Beam profile characteristics of InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs

AU - Yang, Hung Pin D

AU - Hsu, I. Chen

AU - Lai, Fang I.

AU - Lin, Kuo-Jui

AU - Hsiao, Ru Shang

AU - Maleev, Nikolai A.

AU - Blokhin, Sergej A.

AU - Kuo, Hao-Chung

AU - Chi, Jim Y.

PY - 2007/6/1

Y1 - 2007/6/1

N2 - An InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fiber-optic applications is first time demonstrated. The active region of the device contains 3 InGaAs SML QD layers. Each of the InGaAs SML QD layer is formed by alternate deposition of InAs (<1 ML) and GaAs. Single fundamental mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. Side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over entire current operation range. The beam profile study of the PhC-VCSEL indicates that the laser beam is well confined by the photonic crystal structure of the device. The divergence angle of the devices remains almost unchanged with increasing current.

AB - An InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fiber-optic applications is first time demonstrated. The active region of the device contains 3 InGaAs SML QD layers. Each of the InGaAs SML QD layer is formed by alternate deposition of InAs (<1 ML) and GaAs. Single fundamental mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. Side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over entire current operation range. The beam profile study of the PhC-VCSEL indicates that the laser beam is well confined by the photonic crystal structure of the device. The divergence angle of the devices remains almost unchanged with increasing current.

UR - http://www.scopus.com/inward/record.url?scp=34047249383&partnerID=8YFLogxK

U2 - 10.1016/j.optcom.2007.01.063

DO - 10.1016/j.optcom.2007.01.063

M3 - Article

AN - SCOPUS:34047249383

SN - 0030-4018

VL - 274

SP - 94

EP - 99

JO - Optics Communications

JF - Optics Communications

IS - 1

ER -

Beam profile characteristics of InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs

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