We investigate the scaling limit of base oxides treated by thermally-enhanced remote plasma nitridation (TE-RPN) for ultra-thin gate dielectric formation. Under optimized RPN conditions, this work shows gate-dielectric equivalent thickness (EOT) scalability and no transconductance degradation are characteristic of processes with base oxide thickness down to 17Å. Thinner base oxides result in reduced EOT scalability and transconductance degradation, resulting in ∼14Å manufacturable EOT limit for TE-RPN gate dielectrics.
|Number of pages
|IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings
|Published - Oct 2001