Base oxide scaling limit of thermally-enhanced remote plasma nitridation (TE-RPN) process for ultra-thin gate dielectric formation

M. C. Yu; H. T. Huang; C. H. Chen; M. F. Wang; Tuo-Hung Hou; Y. M. Lin; S. M. Jang; C. H. Diaz; J. Sun; Y. K. Fang; S. C. Chen; C. H. Yu; M. S. Liang

doi:10.1109/ISSM.2001.962943

Base oxide scaling limit of thermally-enhanced remote plasma nitridation (TE-RPN) process for ultra-thin gate dielectric formation

M. C. Yu, H. T. Huang, C. H. Chen, M. F. Wang, Tuo-Hung Hou, Y. M. Lin, S. M. Jang, C. H. Diaz, J. Sun, Y. K. Fang, S. C. Chen, C. H. Yu, M. S. Liang

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Abstract

We investigate the scaling limit of base oxides treated by thermally-enhanced remote plasma nitridation (TE-RPN) for ultra-thin gate dielectric formation. Under optimized RPN conditions, this work shows gate-dielectric equivalent thickness (EOT) scalability and no transconductance degradation are characteristic of processes with base oxide thickness down to 17Å. Thinner base oxides result in reduced EOT scalability and transconductance degradation, resulting in ∼14Å manufacturable EOT limit for TE-RPN gate dielectrics.

Original language	English
Pages (from-to)	179-182
Number of pages	4
Journal	IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings
DOIs	https://doi.org/10.1109/ISSM.2001.962943
State	Published - Oct 2001

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Yu, M. C., Huang, H. T., Chen, C. H., Wang, M. F., Hou, T.-H., Lin, Y. M., Jang, S. M., Diaz, C. H., Sun, J., Fang, Y. K., Chen, S. C., Yu, C. H., & Liang, M. S. (2001). Base oxide scaling limit of thermally-enhanced remote plasma nitridation (TE-RPN) process for ultra-thin gate dielectric formation. IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings, 179-182. https://doi.org/10.1109/ISSM.2001.962943

@article{19b887fb3087413d8bf4ec382f5958c3,

title = "Base oxide scaling limit of thermally-enhanced remote plasma nitridation (TE-RPN) process for ultra-thin gate dielectric formation",

abstract = "We investigate the scaling limit of base oxides treated by thermally-enhanced remote plasma nitridation (TE-RPN) for ultra-thin gate dielectric formation. Under optimized RPN conditions, this work shows gate-dielectric equivalent thickness (EOT) scalability and no transconductance degradation are characteristic of processes with base oxide thickness down to 17{\AA}. Thinner base oxides result in reduced EOT scalability and transconductance degradation, resulting in ∼14{\AA} manufacturable EOT limit for TE-RPN gate dielectrics.",

author = "Yu, {M. C.} and Huang, {H. T.} and Chen, {C. H.} and Wang, {M. F.} and Tuo-Hung Hou and Lin, {Y. M.} and Jang, {S. M.} and Diaz, {C. H.} and J. Sun and Fang, {Y. K.} and Chen, {S. C.} and Yu, {C. H.} and Liang, {M. S.}",

year = "2001",

month = oct,

doi = "10.1109/ISSM.2001.962943",

language = "English",

pages = "179--182",

journal = "IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings",

issn = "1523-553X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Yu, MC, Huang, HT, Chen, CH, Wang, MF, Hou, T-H, Lin, YM, Jang, SM, Diaz, CH, Sun, J, Fang, YK, Chen, SC, Yu, CH & Liang, MS 2001, 'Base oxide scaling limit of thermally-enhanced remote plasma nitridation (TE-RPN) process for ultra-thin gate dielectric formation', IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings, pp. 179-182. https://doi.org/10.1109/ISSM.2001.962943

TY - JOUR

T1 - Base oxide scaling limit of thermally-enhanced remote plasma nitridation (TE-RPN) process for ultra-thin gate dielectric formation

AU - Yu, M. C.

AU - Huang, H. T.

AU - Chen, C. H.

AU - Wang, M. F.

AU - Hou, Tuo-Hung

AU - Lin, Y. M.

AU - Jang, S. M.

AU - Diaz, C. H.

AU - Sun, J.

AU - Fang, Y. K.

AU - Chen, S. C.

AU - Yu, C. H.

AU - Liang, M. S.

PY - 2001/10

Y1 - 2001/10

N2 - We investigate the scaling limit of base oxides treated by thermally-enhanced remote plasma nitridation (TE-RPN) for ultra-thin gate dielectric formation. Under optimized RPN conditions, this work shows gate-dielectric equivalent thickness (EOT) scalability and no transconductance degradation are characteristic of processes with base oxide thickness down to 17Å. Thinner base oxides result in reduced EOT scalability and transconductance degradation, resulting in ∼14Å manufacturable EOT limit for TE-RPN gate dielectrics.

AB - We investigate the scaling limit of base oxides treated by thermally-enhanced remote plasma nitridation (TE-RPN) for ultra-thin gate dielectric formation. Under optimized RPN conditions, this work shows gate-dielectric equivalent thickness (EOT) scalability and no transconductance degradation are characteristic of processes with base oxide thickness down to 17Å. Thinner base oxides result in reduced EOT scalability and transconductance degradation, resulting in ∼14Å manufacturable EOT limit for TE-RPN gate dielectrics.

UR - http://www.scopus.com/inward/record.url?scp=0035170680&partnerID=8YFLogxK

U2 - 10.1109/ISSM.2001.962943

DO - 10.1109/ISSM.2001.962943

M3 - Article

AN - SCOPUS:0035170680

SN - 1523-553X

SP - 179

EP - 182

JO - IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings

JF - IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings

ER -

Base oxide scaling limit of thermally-enhanced remote plasma nitridation (TE-RPN) process for ultra-thin gate dielectric formation

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