Barrier heights and silicide formation for Ni, Pd, and Pt on silicon

G. Ottaviani*, King-Ning Tu, J. W. Mayer

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

109 Scopus citations

Abstract

Deposited Ni, Pd, and Pt films on n-type Si have been annealed up to 700°C. Silicide formation was monitored by MeV He4 Rutherford backscattering and glancing-angle x-ray diffraction. Barrier-height measurements were performed mainly using forward I-V characteristics. The values of the barrier heights are 0.66 eV for Ni2Si and NiSi, 0.75 eV for Pd2Si; 0.85 eV for Pt2Si, and 0.87 to 0.88 eV for PtSi. The barrier heights depend primarily on the metal deposited and not on the particular silicide phase.

Original languageEnglish
Pages (from-to)3354-3359
Number of pages6
JournalPhysical Review B
Volume24
Issue number6
DOIs
StatePublished - 1 Jan 1981

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