Barrier heights and silicide formation for Ni, Pd, and Pt on silicon

G. Ottaviani; King-Ning Tu; J. W. Mayer

doi:10.1103/PhysRevB.24.3354

Barrier heights and silicide formation for Ni, Pd, and Pt on silicon

G. Ottaviani^*, King-Ning Tu, J. W. Mayer

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

109 Scopus citations

Abstract

Deposited Ni, Pd, and Pt films on n-type Si have been annealed up to 700°C. Silicide formation was monitored by MeV He4 Rutherford backscattering and glancing-angle x-ray diffraction. Barrier-height measurements were performed mainly using forward I-V characteristics. The values of the barrier heights are 0.66 eV for Ni2Si and NiSi, 0.75 eV for Pd2Si; 0.85 eV for Pt2Si, and 0.87 to 0.88 eV for PtSi. The barrier heights depend primarily on the metal deposited and not on the particular silicide phase.

Original language	English
Pages (from-to)	3354-3359
Number of pages	6
Journal	Physical Review B
Volume	24
Issue number	6
DOIs	https://doi.org/10.1103/PhysRevB.24.3354
State	Published - 1 Jan 1981

Access to Document

10.1103/PhysRevB.24.3354

Cite this

@article{cc6769ae49ac42ddae954d2496f2125b,

title = "Barrier heights and silicide formation for Ni, Pd, and Pt on silicon",

abstract = "Deposited Ni, Pd, and Pt films on n-type Si have been annealed up to 700°C. Silicide formation was monitored by MeV He4 Rutherford backscattering and glancing-angle x-ray diffraction. Barrier-height measurements were performed mainly using forward I-V characteristics. The values of the barrier heights are 0.66 eV for Ni2Si and NiSi, 0.75 eV for Pd2Si; 0.85 eV for Pt2Si, and 0.87 to 0.88 eV for PtSi. The barrier heights depend primarily on the metal deposited and not on the particular silicide phase.",

author = "G. Ottaviani and King-Ning Tu and Mayer, {J. W.}",

year = "1981",

month = jan,

day = "1",

doi = "10.1103/PhysRevB.24.3354",

language = "English",

volume = "24",

pages = "3354--3359",

journal = "Physical Review B",

issn = "2469-9950",

publisher = "American Physical Society",

number = "6",

}

TY - JOUR

T1 - Barrier heights and silicide formation for Ni, Pd, and Pt on silicon

AU - Ottaviani, G.

AU - Tu, King-Ning

AU - Mayer, J. W.

PY - 1981/1/1

Y1 - 1981/1/1

N2 - Deposited Ni, Pd, and Pt films on n-type Si have been annealed up to 700°C. Silicide formation was monitored by MeV He4 Rutherford backscattering and glancing-angle x-ray diffraction. Barrier-height measurements were performed mainly using forward I-V characteristics. The values of the barrier heights are 0.66 eV for Ni2Si and NiSi, 0.75 eV for Pd2Si; 0.85 eV for Pt2Si, and 0.87 to 0.88 eV for PtSi. The barrier heights depend primarily on the metal deposited and not on the particular silicide phase.

AB - Deposited Ni, Pd, and Pt films on n-type Si have been annealed up to 700°C. Silicide formation was monitored by MeV He4 Rutherford backscattering and glancing-angle x-ray diffraction. Barrier-height measurements were performed mainly using forward I-V characteristics. The values of the barrier heights are 0.66 eV for Ni2Si and NiSi, 0.75 eV for Pd2Si; 0.85 eV for Pt2Si, and 0.87 to 0.88 eV for PtSi. The barrier heights depend primarily on the metal deposited and not on the particular silicide phase.

UR - http://www.scopus.com/inward/record.url?scp=0002972330&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.24.3354

DO - 10.1103/PhysRevB.24.3354

M3 - Article

AN - SCOPUS:0002972330

VL - 24

SP - 3354

EP - 3359

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 6

ER -

Barrier heights and silicide formation for Ni, Pd, and Pt on silicon

Abstract

Access to Document

Other files and links

Fingerprint

Cite this