Bandwidth enhancement techniques for transimpedance amplifier in cmos technologies

Chao Hsin Lu, Wei-Zen Chen

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

This paper describes the design of a wide band CMOS transimpedance amplifier (TIA) for optical receiver application. Implemented in a 0.35-μm digital CMOS process, this amplifier can achieve a transimpedance gain of 54.5dBΩ with 2.5GHz-3 dB bandwidth while dissipating 7.5mA from a 3V supply. Bandwidth extension is achieved by inductive peaking and Gm enhancement techniques. The core circuit of the TIA occupies a chip area of 45 μm × 55 μm only.

Original languageEnglish
Article number1471361
Pages (from-to)174-177
Number of pages4
JournalEuropean Solid-State Circuits Conference
StatePublished - 1 Jan 2001

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