Abstract
We report both experimental and theoretical studies on Si1-xGex/Si multiple quantum wells. A self-consistent calculation is employed to model the excitonic transition. It shows that, in the large conduction-band-offset region the Delta(2)-heavy-hole (hh) exciton is the lowest transition, while in the small-offset region the Delta(4)-hh exciton is the lower. From an analysis of the data, a type-II conduction-band-offset ratio of 30+/-3% is concluded.
| Original language | English |
|---|---|
| Pages (from-to) | 4638-4641 |
| Number of pages | 4 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 62 |
| Issue number | 7 |
| DOIs | |
| State | Published - 15 Aug 2000 |
Keywords
- SEMICONDUCTOR HETEROSTRUCTURES
- SI/SIGE HETEROSTRUCTURES
- EDGE PHOTOLUMINESCENCE
- GAP PHOTOLUMINESCENCE
- SILICON
- SUPERLATTICES
- ALIGNMENT
- ENERGIES
- ALLOYS