Band-engineered local cooling in nanoscale junctions

The stability and performance of nanoscale junctions are closely related to the local effective temperature. The local effective temperature is mainly caused by the competition between heating and cooling processes in inelastic electron-phonon scat- tering. Local cooling occurs when the rate of energy in cooling exceeds that in heating. Previous research has been done using either specific potential configuration or an adatom to achieve local cooling. We propose an engineer-able local-cooling mechanism in asymmetric two-terminal tunneling junctions, in which one electrode is made of metal, whereas the other is made of a selectable bad-metal, such as heavily-doped polysilicon. The width of energy window of the selectable material, defined as the width covering all possible energy states counting from the conduction band minimum, can be engineered through doping. Interestingly, we have shown that substantial local cooling can be achieved at room temperature when the width of energy window of the low-density electrode is comparable to the energy of the phonon. The unusual local cooling is caused by the narrowed width of energy window, which obstructs the inelastic scattering for heating.