Band alignment of In₂O₃/β-Ga₂O₃ interface determined by X-ray photoelectron spectroscopy

Keyphrases

• X-ray Photoelectron Spectroscopy 100%
• Ga2O3 100%
• Band Alignment 100%
• Indium Oxide 100%
• Reflection Electron Energy Loss Spectroscopy (REELS) 14%
• X-ray Diffraction Pattern 14%
• Barrier Reduction 14%
• Band Gap 14%
• Deposition Temperature 14%
• Valence Band Offset 14%
• Conduction Band Offset 14%
• Metal Reduction 14%
• Atomic Layer Deposited 14%
• Semiconductor Layer 14%
• Energy Level Alignment 14%
• In2O3 Films 14%

Material Science

• X-Ray Photoelectron Spectroscopy 100%
• Film 50%
• X-Ray Diffraction 50%
• Diffraction Pattern 50%
• Electron Energy Loss Spectrometry 50%
• Band Offset 50%

Physics

• X Ray Spectroscopy 100%
• Polycrystalline 100%
• Electron Energy 20%
• Energy Gaps (Solid State) 20%
• X Ray Diffraction 20%
• Diffraction Pattern 20%
• Energy Band 20%