Band alignment of indium-gallium-zinc oxide/β-Ga2O3 heterojunction determined by angle-resolved X-ray photoelectron spectroscopy

Ya Wei Huan; Xing Lu Wang; Wen Jun Liu; Hong Dong; Shi Bing Long; Shun Ming Sun; Jian Guo Yang; Su Dong Wu; Wen Jie Yu; Ray-Hua Horng; Chang Tai Xia; Hong Yu Yu; Hong Liang Lu; Qing Qing Sun; Shi Jin Ding; David Wei Zhang

doi:10.7567/JJAP.57.100312

Band alignment of indium-gallium-zinc oxide/β-Ga₂O₃ heterojunction determined by angle-resolved X-ray photoelectron spectroscopy

Ya Wei Huan, Xing Lu Wang, Wen Jun Liu, Hong Dong, Shi Bing Long, Shun Ming Sun, Jian Guo Yang, Su Dong Wu, Wen Jie Yu, Ray-Hua Horng, Chang Tai Xia, Hong Yu Yu, Hong Liang Lu, Qing Qing Sun, Shi Jin Ding, David Wei Zhang

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Abstract

The energy band offsets between indium-gallium-zinc oxide (IGZO) and β-Ga₂O₃ were examined by angle-resolved X-ray photoelectron spectroscopy (AR-XPS). The Ga 2p spectra from the heterojunction contributed by the upper IGZO film and the β-Ga₂O₃ substrate were deconvoluted into two sub-peaks with the binding energy difference of 0.3 eV, in good agreement with the theoretical model. Meanwhile, the bandgaps of IGZO and β-Ga₂O₃ were measured to be 3.44 ± 0.1 and 4.64 ± 0.1 eV from the ultraviolet-visible (UV-vis) transmittance spectra. The valence and conduction band offsets between the IGZO and β-Ga₂O₃ were consequently determined to be 0.49 ± 0.05 and 0.71 ± 0.1 eV, respectively. These findings reveal that IGZO is an attractive intermediate semiconductor layer (ISL) for reducing the electron barrier height at metal/Ga₂O₃ interfaces.

Original language	English
Article number	100312
Journal	Japanese journal of applied physics
Volume	57
Issue number	10
DOIs	https://doi.org/10.7567/JJAP.57.100312
State	Published - Oct 2018

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Huan, Y. W., Wang, X. L., Liu, W. J., Dong, H., Long, S. B., Sun, S. M., Yang, J. G., Wu, S. D., Yu, W. J., Horng, R.-H., Xia, C. T., Yu, H. Y., Lu, H. L., Sun, Q. Q., Ding, S. J., & Zhang, D. W. (2018). Band alignment of indium-gallium-zinc oxide/β-Ga₂O₃ heterojunction determined by angle-resolved X-ray photoelectron spectroscopy. Japanese journal of applied physics, 57(10), Article 100312. https://doi.org/10.7567/JJAP.57.100312

@article{4628a37baeb249f4a15d78166ec8bce8,

title = "Band alignment of indium-gallium-zinc oxide/β-Ga2O3 heterojunction determined by angle-resolved X-ray photoelectron spectroscopy",

abstract = "The energy band offsets between indium-gallium-zinc oxide (IGZO) and β-Ga2O3 were examined by angle-resolved X-ray photoelectron spectroscopy (AR-XPS). The Ga 2p spectra from the heterojunction contributed by the upper IGZO film and the β-Ga2O3 substrate were deconvoluted into two sub-peaks with the binding energy difference of 0.3 eV, in good agreement with the theoretical model. Meanwhile, the bandgaps of IGZO and β-Ga2O3 were measured to be 3.44 ± 0.1 and 4.64 ± 0.1 eV from the ultraviolet-visible (UV-vis) transmittance spectra. The valence and conduction band offsets between the IGZO and β-Ga2O3 were consequently determined to be 0.49 ± 0.05 and 0.71 ± 0.1 eV, respectively. These findings reveal that IGZO is an attractive intermediate semiconductor layer (ISL) for reducing the electron barrier height at metal/Ga2O3 interfaces.",

author = "Huan, {Ya Wei} and Wang, {Xing Lu} and Liu, {Wen Jun} and Hong Dong and Long, {Shi Bing} and Sun, {Shun Ming} and Yang, {Jian Guo} and Wu, {Su Dong} and Yu, {Wen Jie} and Ray-Hua Horng and Xia, {Chang Tai} and Yu, {Hong Yu} and Lu, {Hong Liang} and Sun, {Qing Qing} and Ding, {Shi Jin} and Zhang, {David Wei}",

note = "Publisher Copyright: {\textcopyright} 2018 The Japan Society of Applied Physics.",

year = "2018",

month = oct,

doi = "10.7567/JJAP.57.100312",

language = "English",

volume = "57",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "10",

}

Huan, YW, Wang, XL, Liu, WJ, Dong, H, Long, SB, Sun, SM, Yang, JG, Wu, SD, Yu, WJ, Horng, R-H, Xia, CT, Yu, HY, Lu, HL, Sun, QQ, Ding, SJ & Zhang, DW 2018, 'Band alignment of indium-gallium-zinc oxide/β-Ga₂O₃ heterojunction determined by angle-resolved X-ray photoelectron spectroscopy', Japanese journal of applied physics, vol. 57, no. 10, 100312. https://doi.org/10.7567/JJAP.57.100312

TY - JOUR

T1 - Band alignment of indium-gallium-zinc oxide/β-Ga2O3 heterojunction determined by angle-resolved X-ray photoelectron spectroscopy

AU - Huan, Ya Wei

AU - Wang, Xing Lu

AU - Liu, Wen Jun

AU - Dong, Hong

AU - Long, Shi Bing

AU - Sun, Shun Ming

AU - Yang, Jian Guo

AU - Wu, Su Dong

AU - Yu, Wen Jie

AU - Horng, Ray-Hua

AU - Xia, Chang Tai

AU - Yu, Hong Yu

AU - Lu, Hong Liang

AU - Sun, Qing Qing

AU - Ding, Shi Jin

AU - Zhang, David Wei

PY - 2018/10

Y1 - 2018/10

N2 - The energy band offsets between indium-gallium-zinc oxide (IGZO) and β-Ga2O3 were examined by angle-resolved X-ray photoelectron spectroscopy (AR-XPS). The Ga 2p spectra from the heterojunction contributed by the upper IGZO film and the β-Ga2O3 substrate were deconvoluted into two sub-peaks with the binding energy difference of 0.3 eV, in good agreement with the theoretical model. Meanwhile, the bandgaps of IGZO and β-Ga2O3 were measured to be 3.44 ± 0.1 and 4.64 ± 0.1 eV from the ultraviolet-visible (UV-vis) transmittance spectra. The valence and conduction band offsets between the IGZO and β-Ga2O3 were consequently determined to be 0.49 ± 0.05 and 0.71 ± 0.1 eV, respectively. These findings reveal that IGZO is an attractive intermediate semiconductor layer (ISL) for reducing the electron barrier height at metal/Ga2O3 interfaces.

AB - The energy band offsets between indium-gallium-zinc oxide (IGZO) and β-Ga2O3 were examined by angle-resolved X-ray photoelectron spectroscopy (AR-XPS). The Ga 2p spectra from the heterojunction contributed by the upper IGZO film and the β-Ga2O3 substrate were deconvoluted into two sub-peaks with the binding energy difference of 0.3 eV, in good agreement with the theoretical model. Meanwhile, the bandgaps of IGZO and β-Ga2O3 were measured to be 3.44 ± 0.1 and 4.64 ± 0.1 eV from the ultraviolet-visible (UV-vis) transmittance spectra. The valence and conduction band offsets between the IGZO and β-Ga2O3 were consequently determined to be 0.49 ± 0.05 and 0.71 ± 0.1 eV, respectively. These findings reveal that IGZO is an attractive intermediate semiconductor layer (ISL) for reducing the electron barrier height at metal/Ga2O3 interfaces.

UR - http://www.scopus.com/inward/record.url?scp=85055288496&partnerID=8YFLogxK

U2 - 10.7567/JJAP.57.100312

DO - 10.7567/JJAP.57.100312

M3 - Article

AN - SCOPUS:85055288496

SN - 0021-4922

VL - 57

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 10

M1 - 100312

ER -

Band alignment of indium-gallium-zinc oxide/β-Ga₂O₃ heterojunction determined by angle-resolved X-ray photoelectron spectroscopy

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