Balanced Noise Design of Dual-Band 2.4/5-GHz pHEMT LNAs

Chin-Chun Meng, Wei Ling Chang, Yu Chih Hsiao, Meng Che Li, Hsin Yi Chien, Guo Wei Huang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


This paper presents dual-band 2.4/5-GHz dual-band pHEMT LNAs based on a balanced noise design approach using 0.15 μm pHEMT technology. A dual-band LNA has two input match frequencies without simultaneous noise match at these two frequencies especially when the extrinsic loss caused by the inductor is absent. Noise parameters as a function of frequencies for a dual-band FET LNA based on the balanced noise performance are developed. The fully integrated pHEMT LNA achieves power gain of 18 dB at 2.4 GHz and 12 dB at 5 GHz and noise figure about 3dB at 2.4 GHz and 5 GHz, respectively, at 12.6 mA and 3 V. The pHEMT LNA with a bondwire inductor at input match demonstrates a distinct balanced noise performance.

Original languageEnglish
Title of host publicationRWW 2020 - 2020 IEEE Radio and Wireless Symposium
PublisherIEEE Computer Society
Number of pages4
ISBN (Electronic)9781728111209
StatePublished - Jan 2020
Event2020 IEEE Radio and Wireless Symposium, RWW 2020 - San Antonio, United States
Duration: 26 Jan 202029 Jan 2020

Publication series

NameIEEE Radio and Wireless Symposium, RWS
ISSN (Print)2164-2958
ISSN (Electronic)2164-2974


Conference2020 IEEE Radio and Wireless Symposium, RWW 2020
Country/TerritoryUnited States
CitySan Antonio


  • FET
  • LNA
  • dual-band
  • low-noise amplifier
  • noise parameters
  • pHEMT


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