@inproceedings{638bb056725d456a84d6eec8547ecc35,
title = "Back-channel etched double layer in-W-O/In-W-Zn-O thin-film transistors",
abstract = "The thin-film transistors (TFTs) with back-channel etched (BCE) type enable channel length to be narrow and reduce parasitic capacitances owing to its shorter overlaps between the gate and source/drain (S/D) electrodes. In this study, a high-performance BCE-type oxide thin-film transistor was proposed for investigation. A novel stacked double layer ln-W-0 (IWO)/In-W-Zn-0 (1WZO) channel structure was fabricated and developed. Respectively, IWZO exhibits a high resistance to back-channel etching damage and IWO channel achieve a high mobility. The double layer IWO/1WZO TFTs are promising candidates for driving active matrix organic light-emitting diode (AMOLED) and high resolution display applications in the future. The double layer IWO/IWZO TFTs with S/D pattern by H2O2 + KOH can exhibit the high-performance electrical characteristic. The field-effect mobility (pre)-21.1cm2/V-s. Subthreshold swing (S.S.)-0.15 V/dec, threshold voltage (Vth) ∼-0.092 V, and on/off ratio-4.88xl08 can be achieved.",
author = "Li, {Zhcn Hao} and Kuo, {Po Yi} and Chen, {Wen Tzu} and Po-Tsun Liu",
note = "Publisher Copyright: {\textcopyright} 2018 Electrochemical Society Inc.All rights reserved.; Symposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting ; Conference date: 30-09-2018 Through 04-10-2018",
year = "2018",
doi = "10.1149/08611.0111ecst",
language = "English",
volume = "86",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "11",
pages = "111--114",
editor = "Yue Kuo",
booktitle = "ECS Transactions",
edition = "11",
}