Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WNX Schottky Metal Structures for High-Power Applications

Ting En Hsieh; Yueh Chin Lin; Chung Ming Chu; Yu Lin Chuang; Yu Xiang Huang; Wang Cheng Shi; Chang Fu Dee; Burhanuddin Yeop Majlis; Wei-I Lee; Edward Yi Chang

doi:10.1007/s11664-016-4534-1

Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN_X Schottky Metal Structures for High-Power Applications

Ting En Hsieh, Yueh Chin Lin, Chung Ming Chu, Yu Lin Chuang, Yu Xiang Huang, Wang Cheng Shi, Chang Fu Dee, Burhanuddin Yeop Majlis, Wei-I Lee, Edward Yi Chang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

In this study, an Au-free AlGaN/GaN high-electron-mobility transistor (HEMT) with Ti/Al/W ohmic and WNx Schottky metal structures is fabricated and characterized. The device exhibits smooth surface morphology after metallization and shows excellent direct-current (DC) characteristics. The device also demonstrates better performance than the conventional HEMTs under high voltage stress. Furthermore, the Au-free AlGaN/GaN HEMT shows stable device performance after annealing at 400°C. Thus, the Ti/Al/W ohmic and WN_X Schottky metals can be applied in the manufacturing of GaN HEMT to replace the Au based contacts to reduce the manufacturing costs of the GaN HEMT devices with comparable device performance.

Original language	English
Pages (from-to)	3285-3289
Number of pages	5
Journal	Journal of Electronic Materials
Volume	45
Issue number	7
DOIs	https://doi.org/10.1007/s11664-016-4534-1
State	Published - 1 Jul 2016

Keywords

Au-free
GaN HEMT
Schottky barrier height
WN metal
high-voltage stress

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10.1007/s11664-016-4534-1

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@article{2911a562b7c44823bc4d28a77c7a5978,

title = "Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WNX Schottky Metal Structures for High-Power Applications",

abstract = "In this study, an Au-free AlGaN/GaN high-electron-mobility transistor (HEMT) with Ti/Al/W ohmic and WNx Schottky metal structures is fabricated and characterized. The device exhibits smooth surface morphology after metallization and shows excellent direct-current (DC) characteristics. The device also demonstrates better performance than the conventional HEMTs under high voltage stress. Furthermore, the Au-free AlGaN/GaN HEMT shows stable device performance after annealing at 400°C. Thus, the Ti/Al/W ohmic and WNX Schottky metals can be applied in the manufacturing of GaN HEMT to replace the Au based contacts to reduce the manufacturing costs of the GaN HEMT devices with comparable device performance.",

keywords = "Au-free, GaN HEMT, Schottky barrier height, WN metal, high-voltage stress",

author = "Hsieh, {Ting En} and Lin, {Yueh Chin} and Chu, {Chung Ming} and Chuang, {Yu Lin} and Huang, {Yu Xiang} and Shi, {Wang Cheng} and Dee, {Chang Fu} and Majlis, {Burhanuddin Yeop} and Wei-I Lee and Chang, {Edward Yi}",

year = "2016",

month = jul,

day = "1",

doi = "10.1007/s11664-016-4534-1",

language = "English",

volume = "45",

pages = "3285--3289",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

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TY - JOUR

T1 - Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WNX Schottky Metal Structures for High-Power Applications

AU - Hsieh, Ting En

AU - Lin, Yueh Chin

AU - Chu, Chung Ming

AU - Chuang, Yu Lin

AU - Huang, Yu Xiang

AU - Shi, Wang Cheng

AU - Dee, Chang Fu

AU - Majlis, Burhanuddin Yeop

AU - Lee, Wei-I

AU - Chang, Edward Yi

PY - 2016/7/1

Y1 - 2016/7/1

N2 - In this study, an Au-free AlGaN/GaN high-electron-mobility transistor (HEMT) with Ti/Al/W ohmic and WNx Schottky metal structures is fabricated and characterized. The device exhibits smooth surface morphology after metallization and shows excellent direct-current (DC) characteristics. The device also demonstrates better performance than the conventional HEMTs under high voltage stress. Furthermore, the Au-free AlGaN/GaN HEMT shows stable device performance after annealing at 400°C. Thus, the Ti/Al/W ohmic and WNX Schottky metals can be applied in the manufacturing of GaN HEMT to replace the Au based contacts to reduce the manufacturing costs of the GaN HEMT devices with comparable device performance.

AB - In this study, an Au-free AlGaN/GaN high-electron-mobility transistor (HEMT) with Ti/Al/W ohmic and WNx Schottky metal structures is fabricated and characterized. The device exhibits smooth surface morphology after metallization and shows excellent direct-current (DC) characteristics. The device also demonstrates better performance than the conventional HEMTs under high voltage stress. Furthermore, the Au-free AlGaN/GaN HEMT shows stable device performance after annealing at 400°C. Thus, the Ti/Al/W ohmic and WNX Schottky metals can be applied in the manufacturing of GaN HEMT to replace the Au based contacts to reduce the manufacturing costs of the GaN HEMT devices with comparable device performance.

KW - Au-free

KW - GaN HEMT

KW - Schottky barrier height

KW - WN metal

KW - high-voltage stress

UR - http://www.scopus.com/inward/record.url?scp=84964411273&partnerID=8YFLogxK

U2 - 10.1007/s11664-016-4534-1

DO - 10.1007/s11664-016-4534-1

M3 - Article

AN - SCOPUS:84964411273

SN - 0361-5235

VL - 45

SP - 3285

EP - 3289

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 7

ER -

Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN_X Schottky Metal Structures for High-Power Applications

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Keywords

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