Atom-Scaled Hafnium Doping for Strengthening the Germanium Oxide Interfacial Layer of The Gate Stack of Germanium P-Type Metal-Oxide-Semiconductor Field Effect Transistor

Hui Hsuan Li*, Shang Chiun Chen, Yu Hsien Lin*, Chao Hsin Chien*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Chemical Engineering