Asymmetric Low Temperature Bonding Structure with Thin Solder Layers Using Ultra-Thin Buffer Layer

Ting-Yang Yu; Hag-Wen Liang; Yao-Jen Chang; Kuan-Neng Chen

doi:10.1166/jnn.2018.15375

Asymmetric Low Temperature Bonding Structure with Thin Solder Layers Using Ultra-Thin Buffer Layer

Ting-Yang Yu, Hag-Wen Liang, Yao-Jen Chang, Kuan-Neng Chen^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Asymmetric Cu to In/Sn bonding structure with Ni ultrathin buffer layer (UBL) on Cu side is investigated in this research. The usage of Ni UBL slows down intermetallic compound (IMC) formation during bonding. Asymmetric structure can separate electrical isolation and solder process to avoid interaction, which can prevent IMC formation during polymer curing. A well-bonded asymmetric structure can be achieved with submicron solder by 150 degrees C bonding for 15 min. The structure shows the potential for low temperature hybrid bonding technology in high-density three-dimensional (3D) integration.

Original language	English
Pages (from-to)	5397-5403
Number of pages	7
Journal	Journal of Nanoscience and Nanotechnology
Volume	18
Issue number	8
DOIs	https://doi.org/10.1166/jnn.2018.15375
State	Published - Aug 2018

Keywords

3D Integration
3D Integrated Circuit (3D-IC)
Asymmetric Bonding
Hybrid Bonding
Interconnect
Micro Bump

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10.1166/jnn.2018.15375

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title = "Asymmetric Low Temperature Bonding Structure with Thin Solder Layers Using Ultra-Thin Buffer Layer",

abstract = "Asymmetric Cu to In/Sn bonding structure with Ni ultrathin buffer layer (UBL) on Cu side is investigated in this research. The usage of Ni UBL slows down intermetallic compound (IMC) formation during bonding. Asymmetric structure can separate electrical isolation and solder process to avoid interaction, which can prevent IMC formation during polymer curing. A well-bonded asymmetric structure can be achieved with submicron solder by 150 degrees C bonding for 15 min. The structure shows the potential for low temperature hybrid bonding technology in high-density three-dimensional (3D) integration.",

keywords = "3D Integration, 3D Integrated Circuit (3D-IC), Asymmetric Bonding, Hybrid Bonding, Interconnect, Micro Bump",

author = "Ting-Yang Yu and Hag-Wen Liang and Yao-Jen Chang and Kuan-Neng Chen",

year = "2018",

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doi = "10.1166/jnn.2018.15375",

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AU - Yu, Ting-Yang

AU - Liang, Hag-Wen

AU - Chang, Yao-Jen

AU - Chen, Kuan-Neng

PY - 2018/8

Y1 - 2018/8

N2 - Asymmetric Cu to In/Sn bonding structure with Ni ultrathin buffer layer (UBL) on Cu side is investigated in this research. The usage of Ni UBL slows down intermetallic compound (IMC) formation during bonding. Asymmetric structure can separate electrical isolation and solder process to avoid interaction, which can prevent IMC formation during polymer curing. A well-bonded asymmetric structure can be achieved with submicron solder by 150 degrees C bonding for 15 min. The structure shows the potential for low temperature hybrid bonding technology in high-density three-dimensional (3D) integration.

AB - Asymmetric Cu to In/Sn bonding structure with Ni ultrathin buffer layer (UBL) on Cu side is investigated in this research. The usage of Ni UBL slows down intermetallic compound (IMC) formation during bonding. Asymmetric structure can separate electrical isolation and solder process to avoid interaction, which can prevent IMC formation during polymer curing. A well-bonded asymmetric structure can be achieved with submicron solder by 150 degrees C bonding for 15 min. The structure shows the potential for low temperature hybrid bonding technology in high-density three-dimensional (3D) integration.

KW - 3D Integration

KW - 3D Integrated Circuit (3D-IC)

KW - Asymmetric Bonding

KW - Hybrid Bonding

KW - Interconnect

KW - Micro Bump

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DO - 10.1166/jnn.2018.15375

M3 - Article

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VL - 18

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JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 8

ER -

Asymmetric Low Temperature Bonding Structure with Thin Solder Layers Using Ultra-Thin Buffer Layer

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Keywords

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