Asymmetric gate capacitance and high frequency characteristic fluctuations in 16 nm bulk MOSFETs due to random distribution of discrete dopants

Yi-Ming Li; Chih Hong Hwang; Ta Ching Yeh

doi:10.1109/SNW.2008.5418487

Asymmetric gate capacitance and high frequency characteristic fluctuations in 16 nm bulk MOSFETs due to random distribution of discrete dopants

Yi-Ming Li^*, Chih Hong Hwang, Ta Ching Yeh

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

The asymmetric scenario of random dopants distributed near source and drain sides in 16 nm MOSFETs' channel has been advanced using a statistically sound 3D mixed-mode "atomistic" simulation technique. The device with dopants near drain side exhibits less characteristic fluctuations due to the well controlled of major fluctuation source, Cgd, by drain bias. The fluctuations of average gate capacitance, circuit gain, 3db bandwidth, and unity-gain bandwidth for the cases with dopants positioned near source are substantially larger than those with dopants near drain. The result of this study is insightful for problem of random distribution of discrete impurities on device performance.

Original language	American English
DOIs	https://doi.org/10.1109/SNW.2008.5418487
State	Published - 15 Jun 2008
Event	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 - Honolulu, HI, United States Duration: 15 Jun 2008 → 16 Jun 2008

Conference

Conference	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
Country/Territory	United States
City	Honolulu, HI
Period	15/06/08 → 16/06/08

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10.1109/SNW.2008.5418487

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abstract = "The asymmetric scenario of random dopants distributed near source and drain sides in 16 nm MOSFETs' channel has been advanced using a statistically sound 3D mixed-mode {"}atomistic{"} simulation technique. The device with dopants near drain side exhibits less characteristic fluctuations due to the well controlled of major fluctuation source, Cgd, by drain bias. The fluctuations of average gate capacitance, circuit gain, 3db bandwidth, and unity-gain bandwidth for the cases with dopants positioned near source are substantially larger than those with dopants near drain. The result of this study is insightful for problem of random distribution of discrete impurities on device performance.",

author = "Yi-Ming Li and Hwang, {Chih Hong} and Yeh, {Ta Ching}",

year = "2008",

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day = "15",

doi = "10.1109/SNW.2008.5418487",

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T1 - Asymmetric gate capacitance and high frequency characteristic fluctuations in 16 nm bulk MOSFETs due to random distribution of discrete dopants

AU - Li, Yi-Ming

AU - Hwang, Chih Hong

AU - Yeh, Ta Ching

PY - 2008/6/15

Y1 - 2008/6/15

N2 - The asymmetric scenario of random dopants distributed near source and drain sides in 16 nm MOSFETs' channel has been advanced using a statistically sound 3D mixed-mode "atomistic" simulation technique. The device with dopants near drain side exhibits less characteristic fluctuations due to the well controlled of major fluctuation source, Cgd, by drain bias. The fluctuations of average gate capacitance, circuit gain, 3db bandwidth, and unity-gain bandwidth for the cases with dopants positioned near source are substantially larger than those with dopants near drain. The result of this study is insightful for problem of random distribution of discrete impurities on device performance.

AB - The asymmetric scenario of random dopants distributed near source and drain sides in 16 nm MOSFETs' channel has been advanced using a statistically sound 3D mixed-mode "atomistic" simulation technique. The device with dopants near drain side exhibits less characteristic fluctuations due to the well controlled of major fluctuation source, Cgd, by drain bias. The fluctuations of average gate capacitance, circuit gain, 3db bandwidth, and unity-gain bandwidth for the cases with dopants positioned near source are substantially larger than those with dopants near drain. The result of this study is insightful for problem of random distribution of discrete impurities on device performance.

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M3 - Paper

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T2 - IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

Y2 - 15 June 2008 through 16 June 2008

ER -

Asymmetric gate capacitance and high frequency characteristic fluctuations in 16 nm bulk MOSFETs due to random distribution of discrete dopants

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