Asymmetric characteristic fluctuation of undoped gate-all-around nanowire MOSFETs induced by random discrete dopants inside source/drain extensions

Wen Li Sung, Yiming Li*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We perform experimentally validated statistical device simulation to explore characteristic fluctuation induced by random discrete dopants (RDDs) inside the source / drain extensions of undoped gate-all-around silicon nanowire MOSFETs. The engineering findings of this study indicate that both the DC and dynamic characteristic fluctuation caused by RDDs of the drain extension has relatively smaller variability than that caused by RDDs of the source extension. It could be attributed to the effect of random position of RDDs appearing in the source / drain extensions. Compared to RDDs of the source extension, fluctuations of voltage gain and cut-off frequency of the explored gate-all-around silicon nanowire MOSFET circuit induced by RDDs of the drain extension can be significantly reduced from 24.3% and 20.7% to 0.9% and 2.2%, respectively.

Original languageEnglish
Title of host publication2017 IEEE 17th International Conference on Nanotechnology, NANO 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages101-104
Number of pages4
ISBN (Electronic)9781509030286
DOIs
StatePublished - 21 Nov 2017
Event17th IEEE International Conference on Nanotechnology, NANO 2017 - Pittsburgh, United States
Duration: 25 Jul 201728 Jul 2017

Publication series

Name2017 IEEE 17th International Conference on Nanotechnology, NANO 2017

Conference

Conference17th IEEE International Conference on Nanotechnology, NANO 2017
Country/TerritoryUnited States
CityPittsburgh
Period25/07/1728/07/17

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