Arsenic-implanted Si layers annealed using a cw Xe arc lamp

C. Drowley*, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Arsenic implanted layers in 〈100〉 silicon are annealed using a cw Xe arc lamp. The layers, made amorphous by the implantation, crystallize with the same orientation as the substrate. The crystallization appears to follow the solid-phase epitaxial growth model. Approximately 67% of the dopant is activated in the Xe-lamp-annealed samples, compared to ∼80% in samples annealed at 900°C for 30 min.

Original languageEnglish
Pages (from-to)876-878
Number of pages3
JournalApplied Physics Letters
Volume38
Issue number11
DOIs
StatePublished - 1 Dec 1981

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