Arsenic-implanted Si layers annealed using a cw Xe arc lamp

C. Drowley; Chen-Ming Hu

doi:10.1063/1.92205

Arsenic-implanted Si layers annealed using a cw Xe arc lamp

C. Drowley^*, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Arsenic implanted layers in 〈100〉 silicon are annealed using a cw Xe arc lamp. The layers, made amorphous by the implantation, crystallize with the same orientation as the substrate. The crystallization appears to follow the solid-phase epitaxial growth model. Approximately 67% of the dopant is activated in the Xe-lamp-annealed samples, compared to ∼80% in samples annealed at 900°C for 30 min.

Original language	English
Pages (from-to)	876-878
Number of pages	3
Journal	Applied Physics Letters
Volume	38
Issue number	11
DOIs	https://doi.org/10.1063/1.92205
State	Published - 1 Dec 1981

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title = "Arsenic-implanted Si layers annealed using a cw Xe arc lamp",

abstract = "Arsenic implanted layers in 〈100〉 silicon are annealed using a cw Xe arc lamp. The layers, made amorphous by the implantation, crystallize with the same orientation as the substrate. The crystallization appears to follow the solid-phase epitaxial growth model. Approximately 67% of the dopant is activated in the Xe-lamp-annealed samples, compared to ∼80% in samples annealed at 900°C for 30 min.",

author = "C. Drowley and Chen-Ming Hu",

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AU - Drowley, C.

AU - Hu, Chen-Ming

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N2 - Arsenic implanted layers in 〈100〉 silicon are annealed using a cw Xe arc lamp. The layers, made amorphous by the implantation, crystallize with the same orientation as the substrate. The crystallization appears to follow the solid-phase epitaxial growth model. Approximately 67% of the dopant is activated in the Xe-lamp-annealed samples, compared to ∼80% in samples annealed at 900°C for 30 min.

AB - Arsenic implanted layers in 〈100〉 silicon are annealed using a cw Xe arc lamp. The layers, made amorphous by the implantation, crystallize with the same orientation as the substrate. The crystallization appears to follow the solid-phase epitaxial growth model. Approximately 67% of the dopant is activated in the Xe-lamp-annealed samples, compared to ∼80% in samples annealed at 900°C for 30 min.

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JO - Applied Physics Letters

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SN - 0003-6951

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ER -

Arsenic-implanted Si layers annealed using a cw Xe arc lamp

Abstract

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