Arsenic-implanted HfON charge-trapping flash memory with large memory window and good retention

Chung-Yong Tsai; T. H. Lee; Albert Chin

doi:10.1109/LED.2010.2100019

Arsenic-implanted HfON charge-trapping flash memory with large memory window and good retention

Chung-Yong Tsai, T. H. Lee, Albert Chin

Department of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We have fabricated the TaN-[SiO₂-LaAlO₃]- HfONLaAlO₃-SiO₂ Si charge-trapping Flash device. A large 6.4-V initial memory window, a 4.3-V 10-year extrapolated retention window at 125 °C, and a 5.5-V endurance window at 10^-6 cycles were measured under very fast 100- μs and low 16-V program/erase. These excellent results were achieved using an As⁺ implant into the HfON trapping layer, which were significantly better than those of the control device without ion implantation.

Original language	English
Article number	5699333
Pages (from-to)	381-383
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	32
Issue number	3
DOIs	https://doi.org/10.1109/LED.2010.2100019
State	Published - Mar 2011

Keywords

Charge-trapping Flash (CTF)
HfON
ion implant
nonvolatile memory (NVM)

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10.1109/LED.2010.2100019

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title = "Arsenic-implanted HfON charge-trapping flash memory with large memory window and good retention",

abstract = "We have fabricated the TaN-[SiO2-LaAlO3]- HfONLaAlO3-SiO2 Si charge-trapping Flash device. A large 6.4-V initial memory window, a 4.3-V 10-year extrapolated retention window at 125 °C, and a 5.5-V endurance window at 10-6 cycles were measured under very fast 100- μs and low 16-V program/erase. These excellent results were achieved using an As+ implant into the HfON trapping layer, which were significantly better than those of the control device without ion implantation.",

keywords = "Charge-trapping Flash (CTF), HfON, ion implant, nonvolatile memory (NVM)",

author = "Chung-Yong Tsai and Lee, {T. H.} and Albert Chin",

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doi = "10.1109/LED.2010.2100019",

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T1 - Arsenic-implanted HfON charge-trapping flash memory with large memory window and good retention

AU - Tsai, Chung-Yong

AU - Lee, T. H.

AU - Chin, Albert

PY - 2011/3

Y1 - 2011/3

N2 - We have fabricated the TaN-[SiO2-LaAlO3]- HfONLaAlO3-SiO2 Si charge-trapping Flash device. A large 6.4-V initial memory window, a 4.3-V 10-year extrapolated retention window at 125 °C, and a 5.5-V endurance window at 10-6 cycles were measured under very fast 100- μs and low 16-V program/erase. These excellent results were achieved using an As+ implant into the HfON trapping layer, which were significantly better than those of the control device without ion implantation.

AB - We have fabricated the TaN-[SiO2-LaAlO3]- HfONLaAlO3-SiO2 Si charge-trapping Flash device. A large 6.4-V initial memory window, a 4.3-V 10-year extrapolated retention window at 125 °C, and a 5.5-V endurance window at 10-6 cycles were measured under very fast 100- μs and low 16-V program/erase. These excellent results were achieved using an As+ implant into the HfON trapping layer, which were significantly better than those of the control device without ion implantation.

KW - Charge-trapping Flash (CTF)

KW - HfON

KW - ion implant

KW - nonvolatile memory (NVM)

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DO - 10.1109/LED.2010.2100019

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VL - 32

SP - 381

EP - 383

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

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M1 - 5699333

ER -

Arsenic-implanted HfON charge-trapping flash memory with large memory window and good retention

Abstract

Keywords

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