ArF-line high transmittance attenuated phase shift mask blanks using amorphous Al 2 O 3 -ZrO 2 -SiO 2 composite thin films for the 65-, 45- and 32-nm technology nodes

Fu Der Lai*, Jui Ming Hua, C. Y. Huang, Fu-Hsiang Ko, L. A. Wang, C. H. Lin, C. M. Chang, S. Lee, Gia Wei Chern

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Material Science