@inproceedings{541c2ecfe6e946e1bdc44cfcfef2d1fb,
title = "Area Scalable Hafnium-Zirconium-Oxide Ferroelectric Capacitor Using Low-Temperature Back-End-of-Line Compatible 40°C Annealing",
abstract = "Improving the area scalability and reducing the process temperature of Hf0.5Zr0.5O2 (HZO) ferroelectric (FE) capacitors are two of the most critical challenges in future back-end-of-line (BEOL) compatible FE memories. This paper presents the first study demonstrating the existence of a tradeoff between the area scalability and the annealing temperature, suggesting that these two should be optimized simultaneously rather than separately. Optimizing the HZO thickness and Hf:Zr ratio are identified to improve the tradeoff. High remanent polarization density of 24 µC/cm2 and excellent endurance of 9×109 cycles are achieved in a scaled FE area as small as 0.6×0.6 µm2 by using the BEOL-compatible 400°C annealing.",
author = "Huang, \{Tz Shiuan\} and Yeh, \{Po Chun\} and Yang, \{Hsin Yun\} and Lin, \{Yu De\} and Tzeng, \{Pei Jer\} and Sheu, \{Shyh Shyuan\} and Lo, \{Wei Chung\} and Wu, \{Chih I.\} and Hou, \{Tuo Hung\}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 ; Conference date: 18-04-2022 Through 21-04-2022",
year = "2022",
doi = "10.1109/VLSI-TSA54299.2022.9771032",
language = "English",
series = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",
address = "美國",
}