Area Scalable Hafnium-Zirconium-Oxide Ferroelectric Capacitor Using Low-Temperature Back-End-of-Line Compatible 40°C Annealing

Tz Shiuan Huang; Po Chun Yeh; Hsin Yun Yang; Yu De Lin; Pei Jer Tzeng; Shyh Shyuan Sheu; Wei Chung Lo; Chih I. Wu; Tuo Hung Hou

doi:10.1109/VLSI-TSA54299.2022.9771032

Area Scalable Hafnium-Zirconium-Oxide Ferroelectric Capacitor Using Low-Temperature Back-End-of-Line Compatible 40°C Annealing

Tz Shiuan Huang, Po Chun Yeh, Hsin Yun Yang, Yu De Lin, Pei Jer Tzeng, Shyh Shyuan Sheu, Wei Chung Lo, Chih I. Wu, Tuo Hung Hou^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

Improving the area scalability and reducing the process temperature of Hf0.5Zr0.5O2 (HZO) ferroelectric (FE) capacitors are two of the most critical challenges in future back-end-of-line (BEOL) compatible FE memories. This paper presents the first study demonstrating the existence of a tradeoff between the area scalability and the annealing temperature, suggesting that these two should be optimized simultaneously rather than separately. Optimizing the HZO thickness and Hf:Zr ratio are identified to improve the tradeoff. High remanent polarization density of 24 µC/cm2 and excellent endurance of 9×109 cycles are achieved in a scaled FE area as small as 0.6×0.6 µm2 by using the BEOL-compatible 400°C annealing.

Original language	English
Title of host publication	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665409230
DOIs	https://doi.org/10.1109/VLSI-TSA54299.2022.9771032
State	Published - 2022
Event	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, Taiwan Duration: 18 Apr 2022 → 21 Apr 2022

Publication series

Name	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Conference

Conference	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
Country/Territory	Taiwan
City	Hsinchu
Period	18/04/22 → 21/04/22

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10.1109/VLSI-TSA54299.2022.9771032

Cite this

Huang, T. S., Yeh, P. C., Yang, H. Y., Lin, Y. D., Tzeng, P. J., Sheu, S. S., Lo, W. C., Wu, C. I., & Hou, T. H. (2022). Area Scalable Hafnium-Zirconium-Oxide Ferroelectric Capacitor Using Low-Temperature Back-End-of-Line Compatible 40°C Annealing. In 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA54299.2022.9771032

Huang, Tz Shiuan ; Yeh, Po Chun ; Yang, Hsin Yun et al. / Area Scalable Hafnium-Zirconium-Oxide Ferroelectric Capacitor Using Low-Temperature Back-End-of-Line Compatible 40°C Annealing. 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

@inproceedings{541c2ecfe6e946e1bdc44cfcfef2d1fb,

title = "Area Scalable Hafnium-Zirconium-Oxide Ferroelectric Capacitor Using Low-Temperature Back-End-of-Line Compatible 40°C Annealing",

abstract = "Improving the area scalability and reducing the process temperature of Hf0.5Zr0.5O2 (HZO) ferroelectric (FE) capacitors are two of the most critical challenges in future back-end-of-line (BEOL) compatible FE memories. This paper presents the first study demonstrating the existence of a tradeoff between the area scalability and the annealing temperature, suggesting that these two should be optimized simultaneously rather than separately. Optimizing the HZO thickness and Hf:Zr ratio are identified to improve the tradeoff. High remanent polarization density of 24 µC/cm2 and excellent endurance of 9×109 cycles are achieved in a scaled FE area as small as 0.6×0.6 µm2 by using the BEOL-compatible 400°C annealing.",

author = "Huang, \{Tz Shiuan\} and Yeh, \{Po Chun\} and Yang, \{Hsin Yun\} and Lin, \{Yu De\} and Tzeng, \{Pei Jer\} and Sheu, \{Shyh Shyuan\} and Lo, \{Wei Chung\} and Wu, \{Chih I.\} and Hou, \{Tuo Hung\}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 ; Conference date: 18-04-2022 Through 21-04-2022",

year = "2022",

doi = "10.1109/VLSI-TSA54299.2022.9771032",

language = "English",

series = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",

address = "美國",

}

Huang, TS, Yeh, PC, Yang, HY, Lin, YD, Tzeng, PJ, Sheu, SS, Lo, WC, Wu, CI & Hou, TH 2022, Area Scalable Hafnium-Zirconium-Oxide Ferroelectric Capacitor Using Low-Temperature Back-End-of-Line Compatible 40°C Annealing. in 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Institute of Electrical and Electronics Engineers Inc., 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Hsinchu, Taiwan, 18/04/22. https://doi.org/10.1109/VLSI-TSA54299.2022.9771032

Area Scalable Hafnium-Zirconium-Oxide Ferroelectric Capacitor Using Low-Temperature Back-End-of-Line Compatible 40°C Annealing. / Huang, Tz Shiuan; Yeh, Po Chun; Yang, Hsin Yun et al.
2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Area Scalable Hafnium-Zirconium-Oxide Ferroelectric Capacitor Using Low-Temperature Back-End-of-Line Compatible 40°C Annealing

AU - Huang, Tz Shiuan

AU - Yeh, Po Chun

AU - Yang, Hsin Yun

AU - Lin, Yu De

AU - Tzeng, Pei Jer

AU - Sheu, Shyh Shyuan

AU - Lo, Wei Chung

AU - Wu, Chih I.

AU - Hou, Tuo Hung

PY - 2022

Y1 - 2022

N2 - Improving the area scalability and reducing the process temperature of Hf0.5Zr0.5O2 (HZO) ferroelectric (FE) capacitors are two of the most critical challenges in future back-end-of-line (BEOL) compatible FE memories. This paper presents the first study demonstrating the existence of a tradeoff between the area scalability and the annealing temperature, suggesting that these two should be optimized simultaneously rather than separately. Optimizing the HZO thickness and Hf:Zr ratio are identified to improve the tradeoff. High remanent polarization density of 24 µC/cm2 and excellent endurance of 9×109 cycles are achieved in a scaled FE area as small as 0.6×0.6 µm2 by using the BEOL-compatible 400°C annealing.

AB - Improving the area scalability and reducing the process temperature of Hf0.5Zr0.5O2 (HZO) ferroelectric (FE) capacitors are two of the most critical challenges in future back-end-of-line (BEOL) compatible FE memories. This paper presents the first study demonstrating the existence of a tradeoff between the area scalability and the annealing temperature, suggesting that these two should be optimized simultaneously rather than separately. Optimizing the HZO thickness and Hf:Zr ratio are identified to improve the tradeoff. High remanent polarization density of 24 µC/cm2 and excellent endurance of 9×109 cycles are achieved in a scaled FE area as small as 0.6×0.6 µm2 by using the BEOL-compatible 400°C annealing.

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U2 - 10.1109/VLSI-TSA54299.2022.9771032

DO - 10.1109/VLSI-TSA54299.2022.9771032

M3 - Conference contribution

AN - SCOPUS:85130478872

T3 - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

BT - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Y2 - 18 April 2022 through 21 April 2022

ER -

Huang TS, Yeh PC, Yang HY, Lin YD, Tzeng PJ, Sheu SS et al. Area Scalable Hafnium-Zirconium-Oxide Ferroelectric Capacitor Using Low-Temperature Back-End-of-Line Compatible 40°C Annealing. In 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc. 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). doi: 10.1109/VLSI-TSA54299.2022.9771032

Area Scalable Hafnium-Zirconium-Oxide Ferroelectric Capacitor Using Low-Temperature Back-End-of-Line Compatible 40°C Annealing

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