TY - JOUR
T1 - Area-efficient ESD-transient detection circuit with smaller capacitance for on-chip power-rail ESD protection in CMOS ICs
AU - Chen, Shih Hung
AU - Ker, Ming-Dou
PY - 2009/4/30
Y1 - 2009/4/30
N2 - The RC-based power-rail electrostatic-discharge (ESD) clamp circuit with big field-effect transistor (BigFET) layout style in the main ESD clamp n-channel metal-oxide-semiconductor (NMOS) transistor was widely used to enhance the ESD robustness of a CMOS IC fabricated in advanced CMOS processes. To further reduce the occupied layout area of the RC in the power-rail ESD clamp circuit, a new ESD-transient detection circuit realized with smaller capacitance has been proposed and verified in a 0.13-μm CMOS process. From the experimental results, the power-rail ESD clamp circuit with the new proposed ESD-transient detection circuit can achieve a long-enough turn-on duration and higher ESD robustness under ESD stress condition, as well as better immunity against mistrigger and latch-on event under the fast-power-on condition.
AB - The RC-based power-rail electrostatic-discharge (ESD) clamp circuit with big field-effect transistor (BigFET) layout style in the main ESD clamp n-channel metal-oxide-semiconductor (NMOS) transistor was widely used to enhance the ESD robustness of a CMOS IC fabricated in advanced CMOS processes. To further reduce the occupied layout area of the RC in the power-rail ESD clamp circuit, a new ESD-transient detection circuit realized with smaller capacitance has been proposed and verified in a 0.13-μm CMOS process. From the experimental results, the power-rail ESD clamp circuit with the new proposed ESD-transient detection circuit can achieve a long-enough turn-on duration and higher ESD robustness under ESD stress condition, as well as better immunity against mistrigger and latch-on event under the fast-power-on condition.
KW - ESD protection design
KW - ESD-transient detection circuit
KW - Electrostatic discharge
KW - Power-rail ESD clamp circuit
UR - http://www.scopus.com/inward/record.url?scp=67349172702&partnerID=8YFLogxK
U2 - 10.1109/TCSII.2009.2019164
DO - 10.1109/TCSII.2009.2019164
M3 - Article
AN - SCOPUS:67349172702
SN - 1549-8328
VL - 56
SP - 359
EP - 363
JO - IEEE Transactions on Circuits and Systems I: Regular Papers
JF - IEEE Transactions on Circuits and Systems I: Regular Papers
IS - 5
ER -