Application of supercritical fluids for amorphous silicon thin film transistors

Chih Tsung Tsai; Ting Chang Chang; Po-Tsun Liu; Po Yu Yang

Application of supercritical fluids for amorphous silicon thin film transistors

Chih Tsung Tsai^*, Ting Chang Chang, Po-Tsun Liu, Po Yu Yang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to conference › Paper › peer-review

Abstract

Supercritical fluid technology^[1-2] is employed for the first time to passivate the defect states in amorphous silicon thin film transistors (a-Si:H TFTs) at low temperature (150°C). Due to supercritical fluids have gas-like properties of diffusivity and viscosity that allow it to efficiently carry H₂O molecule into amorphous thin film and passivates defects at low temperature. Experiment results indicate that superior transfer characteristic is obtained and the density of states (DOS) is reduced significantly after the treatment of supercritical fluids mixed with water/propyl alcohol.

Original language	English
Pages	479-480
Number of pages	2
State	Published - Dec 2006
Event	13th International Display Workshops, IDW '06 - Otsu, Japan Duration: 6 Dec 2006 → 6 Dec 2006

Conference

Conference	13th International Display Workshops, IDW '06
Country/Territory	Japan
City	Otsu
Period	6/12/06 → 6/12/06

Cite this

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title = "Application of supercritical fluids for amorphous silicon thin film transistors",

abstract = "Supercritical fluid technology[1-2] is employed for the first time to passivate the defect states in amorphous silicon thin film transistors (a-Si:H TFTs) at low temperature (150°C). Due to supercritical fluids have gas-like properties of diffusivity and viscosity that allow it to efficiently carry H2O molecule into amorphous thin film and passivates defects at low temperature. Experiment results indicate that superior transfer characteristic is obtained and the density of states (DOS) is reduced significantly after the treatment of supercritical fluids mixed with water/propyl alcohol.",

author = "Tsai, {Chih Tsung} and Chang, {Ting Chang} and Po-Tsun Liu and Yang, {Po Yu}",

year = "2006",

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language = "English",

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note = "13th International Display Workshops, IDW '06 ; Conference date: 06-12-2006 Through 06-12-2006",

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TY - CONF

T1 - Application of supercritical fluids for amorphous silicon thin film transistors

AU - Tsai, Chih Tsung

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

AU - Yang, Po Yu

PY - 2006/12

Y1 - 2006/12

N2 - Supercritical fluid technology[1-2] is employed for the first time to passivate the defect states in amorphous silicon thin film transistors (a-Si:H TFTs) at low temperature (150°C). Due to supercritical fluids have gas-like properties of diffusivity and viscosity that allow it to efficiently carry H2O molecule into amorphous thin film and passivates defects at low temperature. Experiment results indicate that superior transfer characteristic is obtained and the density of states (DOS) is reduced significantly after the treatment of supercritical fluids mixed with water/propyl alcohol.

AB - Supercritical fluid technology[1-2] is employed for the first time to passivate the defect states in amorphous silicon thin film transistors (a-Si:H TFTs) at low temperature (150°C). Due to supercritical fluids have gas-like properties of diffusivity and viscosity that allow it to efficiently carry H2O molecule into amorphous thin film and passivates defects at low temperature. Experiment results indicate that superior transfer characteristic is obtained and the density of states (DOS) is reduced significantly after the treatment of supercritical fluids mixed with water/propyl alcohol.

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M3 - Paper

AN - SCOPUS:57649217657

SP - 479

EP - 480

T2 - 13th International Display Workshops, IDW '06

Y2 - 6 December 2006 through 6 December 2006

ER -

Application of supercritical fluids for amorphous silicon thin film transistors

Abstract

Conference

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