Application of supercritical C O2 fluid for dielectric improvement of Si Ox film

Chih Tsung Tsai; Ting Chang Chang; Po-Tsun Liu; Yi Li Cheng; Kon Tsu Kin; Fon Shan Huang

doi:10.1149/1.3028217

Application of supercritical C O2 fluid for dielectric improvement of Si Ox film

Chih Tsung Tsai, Ting Chang Chang^*, Po-Tsun Liu, Yi Li Cheng, Kon Tsu Kin, Fon Shan Huang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

In this paper the supercritical carbon dioxide (SCC O2) fluid technology is employed to improve the quality of E-gun evaporation deposited silicon oxide (Si Ox) film at 150°C. After the treatment of SCC O2 fluid mixed with ethyl alcohol and pure H2 O, the oxygen content of Si Ox film increases and the traps within Si Ox are terminated by forming Si-O-Si feature bonds. The leakage current density reduces from 10-2 to 3× 10-8 A cm2 at an electric field of 3 MVcm due to the passivation of traps, and the hysteresis effect in the capacitance-voltage curve is eliminated.

Original language	English
Pages (from-to)	H35-H37
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	2
DOIs	https://doi.org/10.1149/1.3028217
State	Published - 1 Jan 2009

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abstract = "In this paper the supercritical carbon dioxide (SCC O2) fluid technology is employed to improve the quality of E-gun evaporation deposited silicon oxide (Si Ox) film at 150°C. After the treatment of SCC O2 fluid mixed with ethyl alcohol and pure H2 O, the oxygen content of Si Ox film increases and the traps within Si Ox are terminated by forming Si-O-Si feature bonds. The leakage current density reduces from 10-2 to 3× 10-8 A cm2 at an electric field of 3 MVcm due to the passivation of traps, and the hysteresis effect in the capacitance-voltage curve is eliminated.",

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AU - Tsai, Chih Tsung

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

AU - Cheng, Yi Li

AU - Kin, Kon Tsu

AU - Huang, Fon Shan

PY - 2009/1/1

Y1 - 2009/1/1

N2 - In this paper the supercritical carbon dioxide (SCC O2) fluid technology is employed to improve the quality of E-gun evaporation deposited silicon oxide (Si Ox) film at 150°C. After the treatment of SCC O2 fluid mixed with ethyl alcohol and pure H2 O, the oxygen content of Si Ox film increases and the traps within Si Ox are terminated by forming Si-O-Si feature bonds. The leakage current density reduces from 10-2 to 3× 10-8 A cm2 at an electric field of 3 MVcm due to the passivation of traps, and the hysteresis effect in the capacitance-voltage curve is eliminated.

AB - In this paper the supercritical carbon dioxide (SCC O2) fluid technology is employed to improve the quality of E-gun evaporation deposited silicon oxide (Si Ox) film at 150°C. After the treatment of SCC O2 fluid mixed with ethyl alcohol and pure H2 O, the oxygen content of Si Ox film increases and the traps within Si Ox are terminated by forming Si-O-Si feature bonds. The leakage current density reduces from 10-2 to 3× 10-8 A cm2 at an electric field of 3 MVcm due to the passivation of traps, and the hysteresis effect in the capacitance-voltage curve is eliminated.

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ER -

Application of supercritical C O2 fluid for dielectric improvement of Si Ox film

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