In this paper the supercritical carbon dioxide (SCC O2) fluid technology is employed to improve the quality of E-gun evaporation deposited silicon oxide (Si Ox) film at 150°C. After the treatment of SCC O2 fluid mixed with ethyl alcohol and pure H2 O, the oxygen content of Si Ox film increases and the traps within Si Ox are terminated by forming Si-O-Si feature bonds. The leakage current density reduces from 10-2 to 3× 10-8 A cm2 at an electric field of 3 MVcm due to the passivation of traps, and the hysteresis effect in the capacitance-voltage curve is eliminated.
|Number of pages||3|
|Journal||Electrochemical and Solid-State Letters|
|State||Published - 1 Jan 2009|