Application of Elevated-Laser-Liquid-Phase-Epitaxy (ELLPE) Technique on Different Oriented Wafers for Monolithic 3DIC Integration

Bo Jheng Shih*, Yu Ming Pan, Chiao Yen Wang, Huan Yu Chiu, Chih Chao Yang, Chang Hong Shen, Huang Chung Cheng, Kuan Neng Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

This study presents an innovative Elevated-Laser-Liquid-Phase-Epitaxy (ELLPE) technique for producing single-crystal channels in upper-layer circuits. By employing a green nanosecond laser process, the overall process temperature remains within the low thermal budget of monolithic 3DIC, enabling the transformation of amorphous silicon thin films into high-quality continuous films with uniform crystal orientation. Furthermore, we confirmed the successful fabrication of high-quality single-crystal continuous films, aligning with the crystallographic orientation of wafers across various lattice directions through EBSD analysis, and their single-crystalline nature were verified through TEM analysis. These research findings effectively overcome the historical limitation of sequential integration, which was restricted to generating polycrystalline channels exclusively in upper-layer circuits, thus opening avenues for numerous future applications.

Original languageEnglish
Title of host publicationProceedings - IEEE 74th Electronic Components and Technology Conference, ECTC 2024
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2167-2171
Number of pages5
ISBN (Electronic)9798350375985
DOIs
StatePublished - 2024
Event74th IEEE Electronic Components and Technology Conference, ECTC 2024 - Denver, United States
Duration: 28 May 202431 May 2024

Publication series

NameProceedings - Electronic Components and Technology Conference
ISSN (Print)0569-5503

Conference

Conference74th IEEE Electronic Components and Technology Conference, ECTC 2024
Country/TerritoryUnited States
CityDenver
Period28/05/2431/05/24

Keywords

  • Monolithic 3D
  • epitaxy
  • laser crystallization
  • single-crystal silicon

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