Application of Deep Artificial Neural Network to Model Characteristic Fluctuation of Multi-Channel Gate-All-Around Silicon Nanosheet and Nanofin MOSFETs Induced by Random Nanosized Metal Grains

Sagarika Dash, Yiming Li*, Wen Li Sung

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

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