@inproceedings{e4effe9bc1af496ba23651e7c5b2648d,
title = "Anomalous substrate current in polycrystalline silicon thin-film transistors",
abstract = "In this paper, the substrate current of polycrystalline silicon thin-film transistors was measured and investigated for the first time. With a typical T-gate patterned structure, an abnormally high substrate current was found while devices were operated under high gate voltage. This is generated from the parasitic tunnelling current between the n+ inversion region and the p+ body region. Under lower gate voltage, a substrate current generated from impact ionization effects is also observed and characterized. After extracting fitting parameters from the device characteristics, a simple physically-based model was established and compared with the measured results. A plausible grain boundary scattering effect was included in the proposed model. Good agreement was found through a wide range of gate bias and various drain bias conditions, verifying the validity of this unified model.",
author = "Hsiao-Wen Zan and Chen, {Shih Ching} and Wang, {Sheng Hsuan} and Chang, {Chun Yen}",
year = "2003",
month = jan,
day = "1",
doi = "10.1109/ESSDERC.2003.1256915",
language = "English",
isbn = "9780780379992",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "469--472",
editor = "Jose Franca and Paulo Freitas",
booktitle = "ESSDERC 2003 - Proceedings of the 33rd European Solid-State Device Research Conference",
address = "美國",
note = "33rd European Solid-State Device Research Conference, ESSDERC 2003 ; Conference date: 16-09-2003 Through 18-09-2003",
}