Anomalous negative bias temperature instability behavior in p -channel metal-oxide-semiconductor field-effect transistors with HfSiON/SiO₂ gate stack

Keyphrases

• Silica 100%
• MOSFET 100%
• Gate Stack 100%
• P-channel 100%
• HfSiON 100%
• Stress Voltage 100%
• Negative Bias Temperature Instability 100%
• Instability Behavior 100%
• High Stress 50%
• High-k Dielectric 50%
• Trapped Charge 50%
• Voltage Range 50%
• Degradation Mechanism 50%
• Low Stress 50%
• Linear Prediction 50%
• Linear Extrapolation 50%
• Normal Operation Condition 50%
• Lifetime Extraction 50%

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Gate Stack 100%
• Negative-Bias Temperature Instability 100%
• Dielectrics 50%
• Degradation Mechanism 50%
• Linear Extrapolation 50%