Anomalous electrical performance of nanoscaled interfacial oxides for bonded n-GaAs wafers

Hao Ouyang; Yew-Chuhg Wu; Hsiao Hao Chiou; Chia Cheng Liu; Ji Hao Cheng; Wen Ouyang; Shan Haw Chiou; Sham Tsong Shiue; Y. L. Chueh; L. J. Chou

doi:10.1063/1.2185611

Anomalous electrical performance of nanoscaled interfacial oxides for bonded n-GaAs wafers

Hao Ouyang^*, Yew-Chuhg Wu, Hsiao Hao Chiou, Chia Cheng Liu, Ji Hao Cheng, Wen Ouyang, Shan Haw Chiou, Sham Tsong Shiue, Y. L. Chueh, L. J. Chou

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Electrical performance was found to be closely related to the variation of nanosized interface morphology in previous studies. This work investigated in detail the microstructural development of in- and anti-phase bonded interfaces for n-type (100) GaAs wafers treated at 500, 600, 700 and 850°C. The interfacial energy of anti-phase bonding is higher than that of in-phase bonding based on the first-principles calculations. The higher interface energy tends to stabilize the interfacial oxide layer. The continuous interfacial oxide layer observed below 700°C can deteriorate the electrical property due to its insulating property. However, the existence of nanoscaled oxide at anti-phase bonded interfaces can improve the electrical conductivity at 700°C. This is due to the suppression of the evaporation of As atom by the interfacial nanoscaled oxides based on the analysis of autocorrelation function and energy dispersive x-ray spectroscopy.

Original language	English
Article number	112112
Journal	Applied Physics Letters
Volume	88
Issue number	11
DOIs	https://doi.org/10.1063/1.2185611
State	Published - 30 Mar 2006

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@article{3c4dcfdfc4e7454cb3a90a538b49bdb1,

title = "Anomalous electrical performance of nanoscaled interfacial oxides for bonded n-GaAs wafers",

abstract = "Electrical performance was found to be closely related to the variation of nanosized interface morphology in previous studies. This work investigated in detail the microstructural development of in- and anti-phase bonded interfaces for n-type (100) GaAs wafers treated at 500, 600, 700 and 850°C. The interfacial energy of anti-phase bonding is higher than that of in-phase bonding based on the first-principles calculations. The higher interface energy tends to stabilize the interfacial oxide layer. The continuous interfacial oxide layer observed below 700°C can deteriorate the electrical property due to its insulating property. However, the existence of nanoscaled oxide at anti-phase bonded interfaces can improve the electrical conductivity at 700°C. This is due to the suppression of the evaporation of As atom by the interfacial nanoscaled oxides based on the analysis of autocorrelation function and energy dispersive x-ray spectroscopy.",

author = "Hao Ouyang and Yew-Chuhg Wu and Chiou, {Hsiao Hao} and Liu, {Chia Cheng} and Cheng, {Ji Hao} and Wen Ouyang and Chiou, {Shan Haw} and Shiue, {Sham Tsong} and Chueh, {Y. L.} and Chou, {L. J.}",

year = "2006",

month = mar,

day = "30",

doi = "10.1063/1.2185611",

language = "English",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Anomalous electrical performance of nanoscaled interfacial oxides for bonded n-GaAs wafers

AU - Ouyang, Hao

AU - Wu, Yew-Chuhg

AU - Chiou, Hsiao Hao

AU - Liu, Chia Cheng

AU - Cheng, Ji Hao

AU - Ouyang, Wen

AU - Chiou, Shan Haw

AU - Shiue, Sham Tsong

AU - Chueh, Y. L.

AU - Chou, L. J.

PY - 2006/3/30

Y1 - 2006/3/30

N2 - Electrical performance was found to be closely related to the variation of nanosized interface morphology in previous studies. This work investigated in detail the microstructural development of in- and anti-phase bonded interfaces for n-type (100) GaAs wafers treated at 500, 600, 700 and 850°C. The interfacial energy of anti-phase bonding is higher than that of in-phase bonding based on the first-principles calculations. The higher interface energy tends to stabilize the interfacial oxide layer. The continuous interfacial oxide layer observed below 700°C can deteriorate the electrical property due to its insulating property. However, the existence of nanoscaled oxide at anti-phase bonded interfaces can improve the electrical conductivity at 700°C. This is due to the suppression of the evaporation of As atom by the interfacial nanoscaled oxides based on the analysis of autocorrelation function and energy dispersive x-ray spectroscopy.

AB - Electrical performance was found to be closely related to the variation of nanosized interface morphology in previous studies. This work investigated in detail the microstructural development of in- and anti-phase bonded interfaces for n-type (100) GaAs wafers treated at 500, 600, 700 and 850°C. The interfacial energy of anti-phase bonding is higher than that of in-phase bonding based on the first-principles calculations. The higher interface energy tends to stabilize the interfacial oxide layer. The continuous interfacial oxide layer observed below 700°C can deteriorate the electrical property due to its insulating property. However, the existence of nanoscaled oxide at anti-phase bonded interfaces can improve the electrical conductivity at 700°C. This is due to the suppression of the evaporation of As atom by the interfacial nanoscaled oxides based on the analysis of autocorrelation function and energy dispersive x-ray spectroscopy.

UR - http://www.scopus.com/inward/record.url?scp=33645149702&partnerID=8YFLogxK

U2 - 10.1063/1.2185611

DO - 10.1063/1.2185611

M3 - Article

AN - SCOPUS:33645149702

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 112112

ER -

Anomalous electrical performance of nanoscaled interfacial oxides for bonded n-GaAs wafers

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