Anomalous doping behavior of in situ boron-doped polycrystalline silicon deposited by ultrahigh vacuum chemical vapor deposition

Horng-Chih Lin*, Hsiao Yi Lin, Chun Yen Chang, Tan Fu Lei, P. J. Wang, Ray Chern Deng, Jandel Lin, C. Y. Chao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Abstract

The deposition of in situ heavily boron-doped polycrystalline silicon (poly-Si) films was studied using an ultrahigh vacuum/chemical vapor deposition system. Fully activated carrier concentrations up to 3×1020 cm-3 were obtained for the as-deposited films grown at 550°C. For boron concentration beyond this level, the crystallinity of poly-Si films degraded with increasing boron concentration, which resulted in an anomalous rise in resistivity. This crystallinity degradation occurred at a higher rate for films grown on a SiO2 surface than those grown on an undoped poly-Si surface. It is attributed to the preferential adsorption of boron atoms on the SiO2 surface. Under a high B2H6 flux condition, a large amount of boron atoms would accumulate on the SiO2 surface before the formation of Si nuclei, and thus disturbs the subsequent film deposition and grain growth processes.

Original languageEnglish
Pages (from-to)1525-1527
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number11
DOIs
StatePublished - 1 Dec 1993

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