Anomalous crossover in Vth roll-off for indium-doped nMOSFETs

Sun Jay Chang, Chun Yen Chang, Coming Chen, Jih Wen Chou, Tien-Sheng Chao, Tiao Yuan Huang

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


The effects of indium channel implant energy on short-channel effect (SCE) and narrow channel effect (NCE) were studied on NMOS devices down to 0.1 μm channel length. An anomalous crossover in Vth roll-off curves was observed, for the first time, on indium-implanted splits with different implant energies. This intriguing finding, together with the observed reduction in reverse narrow channel effect (RNCE) and effective channel length with reducing indium implant energy, can be consistently explained by the suppression of transient enhanced diffusion (TED) of channel impurity due to indium deactivation.

Original languageEnglish
Pages (from-to)457-459
Number of pages3
JournalIEEE Electron Device Letters
Issue number9
StatePublished - Sep 2000


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