Anomalous crossover in Vth roll-off for indium-doped nMOSFETs

Sun Jay Chang; Chun Yen Chang; Coming Chen; Jih Wen Chou; Tien-Sheng Chao; Tiao Yuan Huang

doi:10.1109/55.863110

Anomalous crossover in Vth roll-off for indium-doped nMOSFETs

Sun Jay Chang, Chun Yen Chang, Coming Chen, Jih Wen Chou, Tien-Sheng Chao, Tiao Yuan Huang

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The effects of indium channel implant energy on short-channel effect (SCE) and narrow channel effect (NCE) were studied on NMOS devices down to 0.1 μm channel length. An anomalous crossover in Vth roll-off curves was observed, for the first time, on indium-implanted splits with different implant energies. This intriguing finding, together with the observed reduction in reverse narrow channel effect (RNCE) and effective channel length with reducing indium implant energy, can be consistently explained by the suppression of transient enhanced diffusion (TED) of channel impurity due to indium deactivation.

Original language	English
Pages (from-to)	457-459
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	21
Issue number	9
DOIs	https://doi.org/10.1109/55.863110
State	Published - Sep 2000

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title = "Anomalous crossover in Vth roll-off for indium-doped nMOSFETs",

abstract = "The effects of indium channel implant energy on short-channel effect (SCE) and narrow channel effect (NCE) were studied on NMOS devices down to 0.1 μm channel length. An anomalous crossover in Vth roll-off curves was observed, for the first time, on indium-implanted splits with different implant energies. This intriguing finding, together with the observed reduction in reverse narrow channel effect (RNCE) and effective channel length with reducing indium implant energy, can be consistently explained by the suppression of transient enhanced diffusion (TED) of channel impurity due to indium deactivation.",

author = "Chang, {Sun Jay} and Chang, {Chun Yen} and Coming Chen and Chou, {Jih Wen} and Tien-Sheng Chao and Huang, {Tiao Yuan}",

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AU - Chang, Sun Jay

AU - Chang, Chun Yen

AU - Chen, Coming

AU - Chou, Jih Wen

AU - Chao, Tien-Sheng

AU - Huang, Tiao Yuan

PY - 2000/9

Y1 - 2000/9

N2 - The effects of indium channel implant energy on short-channel effect (SCE) and narrow channel effect (NCE) were studied on NMOS devices down to 0.1 μm channel length. An anomalous crossover in Vth roll-off curves was observed, for the first time, on indium-implanted splits with different implant energies. This intriguing finding, together with the observed reduction in reverse narrow channel effect (RNCE) and effective channel length with reducing indium implant energy, can be consistently explained by the suppression of transient enhanced diffusion (TED) of channel impurity due to indium deactivation.

AB - The effects of indium channel implant energy on short-channel effect (SCE) and narrow channel effect (NCE) were studied on NMOS devices down to 0.1 μm channel length. An anomalous crossover in Vth roll-off curves was observed, for the first time, on indium-implanted splits with different implant energies. This intriguing finding, together with the observed reduction in reverse narrow channel effect (RNCE) and effective channel length with reducing indium implant energy, can be consistently explained by the suppression of transient enhanced diffusion (TED) of channel impurity due to indium deactivation.

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U2 - 10.1109/55.863110

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VL - 21

SP - 457

EP - 459

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -

Anomalous crossover in Vth roll-off for indium-doped nMOSFETs

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