We have investigated the influence of post deposition annealing (PDA) on compositional depth profiles and chemical structures of CeOx/LaOx/Si(100) and LaOx/CeOx/Si(100) interfaces by angle-resolved X-ray photoemission spectroscopy. Analyses of Ce 3d and O 1s spectra show that a Ce oxidation state changes from Ce4+ to Ce3+ by PDA in N2 at and above 500°C and changes from Ce3+ to Ce4+ by PDA in O 2 at 300°C. This implies that a Ce oxidation state can be controlled by changing the condition of PDA. The diffusion of Ce and La atom occurs at CeOx/LaOx interface by PDA above 500°C.
|Title of host publication||ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7|
|Number of pages||6|
|State||Published - 2009|
|Event||7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria|
Duration: 5 Oct 2009 → 7 Oct 2009
|Conference||7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society|
|Period||5/10/09 → 7/10/09|