Annealing effects on resistive switching of IGZO-based CBRAM devices

Kai Jhih Gan; Po Tsun Liu; Dun Bao Ruan; Yu Chuan Chiu; Simon M. Sze

doi:10.1016/j.vacuum.2020.109630

Annealing effects on resistive switching of IGZO-based CBRAM devices

Kai Jhih Gan, Po Tsun Liu^*, Dun Bao Ruan, Yu Chuan Chiu, Simon M. Sze

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

In this study, the impact of post-oxide deposition annealing on performance of IGZO-based conductive-bridging random access memory (CBRAM) is reported. It is found that besides the distinct reduction in resistive switching parameters of SET/RESET voltages, their dispersions, and the resistance ratio of high-resistance state to low-resistance state can be improved after N₂ annealing. The annealing effects on enhancing of the resistive switching properties are investigated by x-ray photoelectron spectra. It can be considered that the formation of the filament is better controlled by the increase of oxygen vacancies in the switching layer, which is the main reason for the improvement of resistive switching characteristics.

Original language	English
Article number	109630
Journal	Vacuum
Volume	180
DOIs	https://doi.org/10.1016/j.vacuum.2020.109630
State	Published - Oct 2020

Keywords

Annealing treatment
Conductive-bridge random access memory (CBRAM)
Indium–gallium–zinc oxide (IGZO)
Resistive switching

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10.1016/j.vacuum.2020.109630

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title = "Annealing effects on resistive switching of IGZO-based CBRAM devices",

abstract = "In this study, the impact of post-oxide deposition annealing on performance of IGZO-based conductive-bridging random access memory (CBRAM) is reported. It is found that besides the distinct reduction in resistive switching parameters of SET/RESET voltages, their dispersions, and the resistance ratio of high-resistance state to low-resistance state can be improved after N2 annealing. The annealing effects on enhancing of the resistive switching properties are investigated by x-ray photoelectron spectra. It can be considered that the formation of the filament is better controlled by the increase of oxygen vacancies in the switching layer, which is the main reason for the improvement of resistive switching characteristics.",

keywords = "Annealing treatment, Conductive-bridge random access memory (CBRAM), Indium–gallium–zinc oxide (IGZO), Resistive switching",

author = "Gan, {Kai Jhih} and Liu, {Po Tsun} and Ruan, {Dun Bao} and Chiu, {Yu Chuan} and Sze, {Simon M.}",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier Ltd",

year = "2020",

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doi = "10.1016/j.vacuum.2020.109630",

language = "English",

volume = "180",

journal = "Vacuum",

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T1 - Annealing effects on resistive switching of IGZO-based CBRAM devices

AU - Gan, Kai Jhih

AU - Liu, Po Tsun

AU - Ruan, Dun Bao

AU - Chiu, Yu Chuan

AU - Sze, Simon M.

PY - 2020/10

Y1 - 2020/10

N2 - In this study, the impact of post-oxide deposition annealing on performance of IGZO-based conductive-bridging random access memory (CBRAM) is reported. It is found that besides the distinct reduction in resistive switching parameters of SET/RESET voltages, their dispersions, and the resistance ratio of high-resistance state to low-resistance state can be improved after N2 annealing. The annealing effects on enhancing of the resistive switching properties are investigated by x-ray photoelectron spectra. It can be considered that the formation of the filament is better controlled by the increase of oxygen vacancies in the switching layer, which is the main reason for the improvement of resistive switching characteristics.

AB - In this study, the impact of post-oxide deposition annealing on performance of IGZO-based conductive-bridging random access memory (CBRAM) is reported. It is found that besides the distinct reduction in resistive switching parameters of SET/RESET voltages, their dispersions, and the resistance ratio of high-resistance state to low-resistance state can be improved after N2 annealing. The annealing effects on enhancing of the resistive switching properties are investigated by x-ray photoelectron spectra. It can be considered that the formation of the filament is better controlled by the increase of oxygen vacancies in the switching layer, which is the main reason for the improvement of resistive switching characteristics.

KW - Annealing treatment

KW - Conductive-bridge random access memory (CBRAM)

KW - Indium–gallium–zinc oxide (IGZO)

KW - Resistive switching

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DO - 10.1016/j.vacuum.2020.109630

M3 - Article

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SN - 0042-207X

VL - 180

JO - Vacuum

JF - Vacuum

M1 - 109630

ER -

Annealing effects on resistive switching of IGZO-based CBRAM devices

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Keywords

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