Annealing effects on resistive switching of IGZO-based CBRAM devices

Kai Jhih Gan, Po Tsun Liu*, Dun Bao Ruan, Yu Chuan Chiu, Simon M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


In this study, the impact of post-oxide deposition annealing on performance of IGZO-based conductive-bridging random access memory (CBRAM) is reported. It is found that besides the distinct reduction in resistive switching parameters of SET/RESET voltages, their dispersions, and the resistance ratio of high-resistance state to low-resistance state can be improved after N2 annealing. The annealing effects on enhancing of the resistive switching properties are investigated by x-ray photoelectron spectra. It can be considered that the formation of the filament is better controlled by the increase of oxygen vacancies in the switching layer, which is the main reason for the improvement of resistive switching characteristics.

Original languageEnglish
Article number109630
StatePublished - Oct 2020


  • Annealing treatment
  • Conductive-bridge random access memory (CBRAM)
  • Indium–gallium–zinc oxide (IGZO)
  • Resistive switching


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