Anisotropic electronic structure in single crystalline orthorhombic TbMnO3 thin films

Kaung-Hsiung Wu*, I. C. Gou, Chih-Wei Luo, T. M. Uen, Jiunn-Yuan Lin, Jenh-Yih Juang, C. K. Chen, J. M. Lee, J. M. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


We have deposited the c-axis-oriented orthorhombic TbMnO3 (o-TMO) films with well-aligned in-plane orientations on NdGaO3 (001) substrates by using pulsed laser deposition. The distinctive orientation alignments between the film and substrate allow the study of the X-ray absorption spectroscopy (XAS) with the electric field along three major crystallographic directions, respectively. Polarization-dependent XAS spectra show significant anisotropy in the electronic structure of o-TMO. The correlation between the electronic structure, the bonding anisotropy, and the magnetoelectric effect in the multiferroic materials is revealed.

Original languageAmerican English
Pages (from-to)2275-2279
Number of pages5
JournalThin Solid Films
Issue number8
StatePublished - 1 Feb 2010


  • Electronic structure
  • Magnetoelectric effect
  • TbMnO3 thin films
  • X-ray absorption spectroscopy


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