Analytical Noise Optimization of Single-/Dual-Band MOS LNAs With Substrate and Metal Loss Effects of Inductors

Wei Ling Chang, Chin-Chun Meng*, Jung Hung Ni, Kai Chun Chang, Chih Kai Chang, Po Yi Lee, Yen Lin Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Analytical noise formulations and design optimization of single- and dual-band inductively source-degenerated MOS low-noise amplifiers (LNAs) with the substrate and metal loss effects of on-chip inductors are established in this paper. It reveals that the noise figures of both single-/dual-band LNAs degrade substantially under the consideration of the loss effects. However, by increasing the device size, the noise optimization methodology of simultaneous noise and input match for a single-band LNA still holds true with concern for the loss effects. For a dual-band LNA, analytical noise optimization for a balanced noise design is established for inductors with metal and substrate loss and indicates a larger device size. The substrate and metal loss effects of inductors can be mitigated using integrated passive device (IPD) process for the input match network. The demonstrated single-band 0.18- μ m MOS LNAs with and without IPD process show noise figures of 1.53 and 2.52 dB at 2.4 GHz, respectively. Subsequently, the implemented dual-band 0.18- μ m MOS LNAs with and without IPD process show noise figures of 1.6/2.6 and 3.25/4.1 dB at 2.4/5 GHz, respectively.

Original languageEnglish
Article number8630666
Pages (from-to)2454-2467
Number of pages14
JournalIEEE Transactions on Circuits and Systems I: Regular Papers
Volume66
Issue number7
DOIs
StatePublished - 1 Jul 2019

Keywords

  • Concurrent dual-band
  • MOS
  • inductor
  • integrated passive devices (IPD)
  • loss effect
  • low noise amplifier (LNA)

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