Analysis of two-phonon infrared spectral features of gallium arsenide and indium phosphide by firstprinciples calculations

Huang Hsiang Lin; Pei Kang Chung; Shun-Tung Yen

doi:10.1088/2053-1591/1/4/045901

Analysis of two-phonon infrared spectral features of gallium arsenide and indium phosphide by firstprinciples calculations

Huang Hsiang Lin, Pei Kang Chung, Shun-Tung Yen

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We perform a self-consistent calculation based on density functional perturbation theory to analyze the infrared spectral features of GaAs and InP arising from two-phonon processes. The features are identified and assigned the critical points in the first Brillouin zone. Distribution of the critical points is investigated. The analysis demonstrates that collections of phonons of wave vectors around symmetry points and along symmetry lines are responsible for strong infrared features in two-phonon processes.

Original language	English
Article number	045901
Journal	Materials Research Express
Volume	1
Issue number	4
DOIs	https://doi.org/10.1088/2053-1591/1/4/045901
State	Published - 3 Oct 2014

Keywords

Density of states
Far infrared
Gallium arsenide
Indium phosphide
Two-phonon processes
Van Hove singularity

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10.1088/2053-1591/1/4/045901

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abstract = "We perform a self-consistent calculation based on density functional perturbation theory to analyze the infrared spectral features of GaAs and InP arising from two-phonon processes. The features are identified and assigned the critical points in the first Brillouin zone. Distribution of the critical points is investigated. The analysis demonstrates that collections of phonons of wave vectors around symmetry points and along symmetry lines are responsible for strong infrared features in two-phonon processes.",

keywords = "Density of states, Far infrared, Gallium arsenide, Indium phosphide, Two-phonon processes, Van Hove singularity",

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AU - Chung, Pei Kang

AU - Yen, Shun-Tung

PY - 2014/10/3

Y1 - 2014/10/3

N2 - We perform a self-consistent calculation based on density functional perturbation theory to analyze the infrared spectral features of GaAs and InP arising from two-phonon processes. The features are identified and assigned the critical points in the first Brillouin zone. Distribution of the critical points is investigated. The analysis demonstrates that collections of phonons of wave vectors around symmetry points and along symmetry lines are responsible for strong infrared features in two-phonon processes.

AB - We perform a self-consistent calculation based on density functional perturbation theory to analyze the infrared spectral features of GaAs and InP arising from two-phonon processes. The features are identified and assigned the critical points in the first Brillouin zone. Distribution of the critical points is investigated. The analysis demonstrates that collections of phonons of wave vectors around symmetry points and along symmetry lines are responsible for strong infrared features in two-phonon processes.

KW - Density of states

KW - Far infrared

KW - Gallium arsenide

KW - Indium phosphide

KW - Two-phonon processes

KW - Van Hove singularity

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ER -

Analysis of two-phonon infrared spectral features of gallium arsenide and indium phosphide by firstprinciples calculations

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Keywords

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