ANALYSIS OF THIN-FILM STRUCTURES WITH NUCLEAR BACKSCATTERING AND X-RAY DIFFRACTION.

J. W. Mayer*, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

90 Scopus citations

Abstract

Backscattering of MeV **4He ions and Seemann-Bohlin x-ray diffraction techniques have been used to study silicide formation on Si and SiO//2 covered with evaporated metal films. Backscattering techniques provide information on the composition of thin- film structures as a function of depth. The glancing-angle x-ray technique provides identification of phases and structural information. Examples are given of V on Si and on SiO//2 to illustrate the major features of these analysis techniques. A general review of recent studies of silicide formation is included.

Original languageEnglish
Pages86-93
Number of pages8
DOIs
StatePublished - 1 Jan 1974

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