Backscattering of MeV **4He ions and Seemann-Bohlin x-ray diffraction techniques have been used to study silicide formation on Si and SiO//2 covered with evaporated metal films. Backscattering techniques provide information on the composition of thin- film structures as a function of depth. The glancing-angle x-ray technique provides identification of phases and structural information. Examples are given of V on Si and on SiO//2 to illustrate the major features of these analysis techniques. A general review of recent studies of silicide formation is included.
|Number of pages||8|
|State||Published - 1 Jan 1974|