Analysis of thermal activation energy for poly-Si TFTs

Chao Chian Chiu*, Hsiao-Wen Zan, Er Kang Shaw

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The conduction behavior of Poly-Si TFTs had been carefully studied by analyzing their activation energy under different bias condition. It is found that the trapping effects dominate grain boundary barrier under small drain bias, while the DIGBL effect was pronounced under high drain bias. Considering both the trapping effects and the DIGBL effects, a new activation energy model has been proposed and verified. The cut-off region activation energy of devices with or without LDD structure was also compared in this paper. The influence of gate bias on leakage current was examined by device simulation results.

Original languageEnglish
Title of host publicationProceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05
EditorsH.P. David Shieh, F.C. Chen
Pages533-536
Number of pages4
StatePublished - Feb 2005
EventInternational Display Manufacturing Conference and Exhibition, IDMC'05 - Taipei, Japan
Duration: 21 Feb 200524 Feb 2005

Publication series

NameInternational Display Manufacturing Conference and Exhibition, IDMC'05

Conference

ConferenceInternational Display Manufacturing Conference and Exhibition, IDMC'05
Country/TerritoryJapan
CityTaipei
Period21/02/0524/02/05

Fingerprint

Dive into the research topics of 'Analysis of thermal activation energy for poly-Si TFTs'. Together they form a unique fingerprint.

Cite this