Analysis of the scaling effect on NAND flash memory cell operation

R. Shirot, Hiroshi Watanabe

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In recent years, the enormous success of NAND Flash memory technology in realizing multi-gigabyte memory chips has evidently triggered a lot of difficulties concerning its cell operation, such as parasitic neighbouring cell coupling, FN-tunnelling statistics, Vt distribution widening by RTN, et al. In this paper, two kinds of phenomena are shown. One is the increase of the interface state density after write/erase cycles, which will degrades the sub-threshold swing (SS) of the memory cell in the NAND string. The other is the increase of the programmed Vt distribution after programming, which also reduces the cell operation margin. It is revealed that Vt distribution widening closely depends on the floating gate doping concentration of Phosphorus. These phenomena become more serious as cell size smaller.

Original languageEnglish
Title of host publicationNonvolatile Memories
Pages27-35
Number of pages9
Edition34
DOIs
StatePublished - 1 Dec 2012
EventSymposium on Nonvolatile Memories - 22nd ECS Meeting/PRiME 2012 - Honolulu, HI, United States
Duration: 7 Oct 201212 Oct 2012

Publication series

NameECS Transactions
Number34
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSymposium on Nonvolatile Memories - 22nd ECS Meeting/PRiME 2012
Country/TerritoryUnited States
CityHonolulu, HI
Period7/10/1212/10/12

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