Analysis of Size-Dependent Quantum Efficiency in AlGaInP Micro-Light-Emitting Diodes with Consideration for Current Leakage

Yi Yang Li, Fang Zhong Lin, Kuo Lin Chi, Shao Yi Weng, Guan Ying Lee, Hao Chung Kuo, Chien-Chung Lin*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

This study fabricated and analyzed AlGaInP-based red micro-light-emitting diodes (LEDs) ranging from 2 to 15 μm in size. To collect photons from a single micro-LED at this scale, a solar cell chip near the micro-LEDs was used. Quantum efficiency decreased at a faster rate than that predicted by the standard ABC model under high currents, and a leakage current component was added to fully describe this phenomenon. The modified model can be used to extract valuable information regarding the micro-LEDs, such as the Shockley-Read-Hall coefficient. A size dependency analysis revealed that the bulk Shockley-Read-Hall coefficient and surface recombination velocity of the micro-LEDs were 6.81 × 107 1/sec and 5.99 × 104 cm/sec, respectively. Further analysis of the size-dependent recombination effect can help us solve the side wall problem and maximize the light output of AlGaInP-based micro-LEDs for ultrahigh-resolution displays.

Original languageEnglish
JournalIEEE Photonics Journal
Volume14
Issue number1
DOIs
StatePublished - 1 Feb 2022

Keywords

  • Display
  • leakage current
  • light-emitting diode
  • quantum well device
  • radiative recombination

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