Analysis of single-trap-induced random telegraph noise and its interaction with work function variation for tunnel FET

Ming Long Fan; Vita Pi Ho Hu; Yin Nein Chen; Pin Su; Ching Te Chuang

doi:10.1109/TED.2013.2258157

Analysis of single-trap-induced random telegraph noise and its interaction with work function variation for tunnel FET

Ming Long Fan, Vita Pi Ho Hu, Yin Nein Chen, Pin Su, Ching Te Chuang

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63 Scopus citations

Abstract

This paper analyzes the impacts of a single acceptor-type and donor-type interface trap induced random telegraph noise (RTN) on tunnel FET (TFET) devices and its interaction with work function variation (WFV) using atomistic 3-D TCAD simulations. Significant RTN amplitude (Δ I_DI_D) is observed for a single acceptor trap near the tunneling junction, whereas a donor trap is found to cause more severe impact over a broader region across the channel region. In addition, several device design parameters that can be used to improve TFET subthreshold characteristics (thinner equivalent oxide thickness or longer L_eff) are found to increase the susceptibility to RTN. Our results indicate that under WFV, TFET exhibits weaker correlation between I_ON and I_OFF than that in the conventional MOSFET counterpart. In the presence of WFV, the RTN amplitude can be enhanced or reduced depending on the type of the trap and the composition/orientation of metal-gate grain.

Original language	English
Article number	6514516
Pages (from-to)	2038-2044
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	60
Issue number	6
DOIs	https://doi.org/10.1109/TED.2013.2258157
State	Published - Jun 2013

Keywords

Random telegraph noise (RTN)
tunnel FET (TFET)
variability
work function variation (WFV)

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10.1109/TED.2013.2258157

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title = "Analysis of single-trap-induced random telegraph noise and its interaction with work function variation for tunnel FET",

abstract = "This paper analyzes the impacts of a single acceptor-type and donor-type interface trap induced random telegraph noise (RTN) on tunnel FET (TFET) devices and its interaction with work function variation (WFV) using atomistic 3-D TCAD simulations. Significant RTN amplitude (Δ IDID) is observed for a single acceptor trap near the tunneling junction, whereas a donor trap is found to cause more severe impact over a broader region across the channel region. In addition, several device design parameters that can be used to improve TFET subthreshold characteristics (thinner equivalent oxide thickness or longer Leff) are found to increase the susceptibility to RTN. Our results indicate that under WFV, TFET exhibits weaker correlation between ION and IOFF than that in the conventional MOSFET counterpart. In the presence of WFV, the RTN amplitude can be enhanced or reduced depending on the type of the trap and the composition/orientation of metal-gate grain.",

keywords = "Random telegraph noise (RTN), tunnel FET (TFET), variability, work function variation (WFV)",

author = "Fan, {Ming Long} and Hu, {Vita Pi Ho} and Chen, {Yin Nein} and Pin Su and Chuang, {Ching Te}",

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AU - Fan, Ming Long

AU - Hu, Vita Pi Ho

AU - Chen, Yin Nein

AU - Su, Pin

AU - Chuang, Ching Te

PY - 2013/6

Y1 - 2013/6

N2 - This paper analyzes the impacts of a single acceptor-type and donor-type interface trap induced random telegraph noise (RTN) on tunnel FET (TFET) devices and its interaction with work function variation (WFV) using atomistic 3-D TCAD simulations. Significant RTN amplitude (Δ IDID) is observed for a single acceptor trap near the tunneling junction, whereas a donor trap is found to cause more severe impact over a broader region across the channel region. In addition, several device design parameters that can be used to improve TFET subthreshold characteristics (thinner equivalent oxide thickness or longer Leff) are found to increase the susceptibility to RTN. Our results indicate that under WFV, TFET exhibits weaker correlation between ION and IOFF than that in the conventional MOSFET counterpart. In the presence of WFV, the RTN amplitude can be enhanced or reduced depending on the type of the trap and the composition/orientation of metal-gate grain.

AB - This paper analyzes the impacts of a single acceptor-type and donor-type interface trap induced random telegraph noise (RTN) on tunnel FET (TFET) devices and its interaction with work function variation (WFV) using atomistic 3-D TCAD simulations. Significant RTN amplitude (Δ IDID) is observed for a single acceptor trap near the tunneling junction, whereas a donor trap is found to cause more severe impact over a broader region across the channel region. In addition, several device design parameters that can be used to improve TFET subthreshold characteristics (thinner equivalent oxide thickness or longer Leff) are found to increase the susceptibility to RTN. Our results indicate that under WFV, TFET exhibits weaker correlation between ION and IOFF than that in the conventional MOSFET counterpart. In the presence of WFV, the RTN amplitude can be enhanced or reduced depending on the type of the trap and the composition/orientation of metal-gate grain.

KW - Random telegraph noise (RTN)

KW - tunnel FET (TFET)

KW - variability

KW - work function variation (WFV)

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ER -

Analysis of single-trap-induced random telegraph noise and its interaction with work function variation for tunnel FET

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