Analysis of parallel Schottky contacts by differential internal photoemission spectroscopy

T. Okumura; King-Ning Tu

doi:10.1063/1.332055

Analysis of parallel Schottky contacts by differential internal photoemission spectroscopy

T. Okumura^*, King-Ning Tu

^*Corresponding author for this work

International College of Semiconductor Technology

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Abstract

A differential analysis of internal photoemission spectroscopy has been developed for the study of nonuniformity in a Schottky contact. The analysis is capable of revealing the presence of a high-low parallel contact in a spectroscopic manner. It has been applied to a discrete parallel contact consisting of Pd₂Si and NiSi as well as a nonuniform contact of Pd on Si in the as-deposited state. The nonuniformity in the latter case is due to the existence of high barrier regions (0.86 eV) in parallel to those of Pd ₂Si (0.74 eV) and it disappears after a subsequent annealing at 250 or 450°C.

Original language	English
Pages (from-to)	922-927
Number of pages	6
Journal	Journal of Applied Physics
Volume	54
Issue number	2
DOIs	https://doi.org/10.1063/1.332055
State	Published - 1 Dec 1983

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abstract = "A differential analysis of internal photoemission spectroscopy has been developed for the study of nonuniformity in a Schottky contact. The analysis is capable of revealing the presence of a high-low parallel contact in a spectroscopic manner. It has been applied to a discrete parallel contact consisting of Pd2Si and NiSi as well as a nonuniform contact of Pd on Si in the as-deposited state. The nonuniformity in the latter case is due to the existence of high barrier regions (0.86 eV) in parallel to those of Pd 2Si (0.74 eV) and it disappears after a subsequent annealing at 250 or 450°C.",

author = "T. Okumura and King-Ning Tu",

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AU - Tu, King-Ning

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N2 - A differential analysis of internal photoemission spectroscopy has been developed for the study of nonuniformity in a Schottky contact. The analysis is capable of revealing the presence of a high-low parallel contact in a spectroscopic manner. It has been applied to a discrete parallel contact consisting of Pd2Si and NiSi as well as a nonuniform contact of Pd on Si in the as-deposited state. The nonuniformity in the latter case is due to the existence of high barrier regions (0.86 eV) in parallel to those of Pd 2Si (0.74 eV) and it disappears after a subsequent annealing at 250 or 450°C.

AB - A differential analysis of internal photoemission spectroscopy has been developed for the study of nonuniformity in a Schottky contact. The analysis is capable of revealing the presence of a high-low parallel contact in a spectroscopic manner. It has been applied to a discrete parallel contact consisting of Pd2Si and NiSi as well as a nonuniform contact of Pd on Si in the as-deposited state. The nonuniformity in the latter case is due to the existence of high barrier regions (0.86 eV) in parallel to those of Pd 2Si (0.74 eV) and it disappears after a subsequent annealing at 250 or 450°C.

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Analysis of parallel Schottky contacts by differential internal photoemission spectroscopy

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