Analysis of narrow width effects in polycrystalline silicon thin film transistors

Keyphrases

• Channel Length 20%
• Channel Width 80%
• Deep State 20%
• Density of States 40%
• Density States 20%
• Drain Bias 20%
• Gate Bias 20%
• Grain Boundary Traps 20%
• Narrow-width Effect 100%
• Output Characteristics 20%
• Physically Based Model 20%
• Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs) 100%
• Subthreshold Swing 60%
• Tail States 20%
• TFT Characteristics 40%
• Threshold Voltage 20%
• Trap Density 20%
• Voltage Swing 20%

Engineering

• Drain Bias 20%
• Gate Bias 20%
• Narrow Width 100%
• Polysilicon 100%
• Thin-Film Transistor 100%