Analysis of monolithic 3D 6T SRAM using ultra-thin-body InGaAs/Ge MOSFETs considering interlayer coupling

Kuan Chin Yu; Ming Long Fan; Pin Su; Ching Te Chuang

doi:10.1109/VLSI-TSA.2015.7117588

Analysis of monolithic 3D 6T SRAM using ultra-thin-body InGaAs/Ge MOSFETs considering interlayer coupling

Kuan Chin Yu, Ming Long Fan, Pin Su, Ching Te Chuang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

TCAD analysis results indicate that the cell robustness and performance of InGaAs-n/Ge-p 6T SRAM can be improved simultaneously with interlayer coupling through optimized monolithic 3D layout design. We suggest two layout designs for high performance and low power operation, respectively. Moreover, with optimized layout designs, InGaAs/Ge 6T SRAM exhibits larger Read access time and Time-to-Write improvement compared with Si-based counterparts.

Original language	English
Title of host publication	2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479973750
DOIs	https://doi.org/10.1109/VLSI-TSA.2015.7117588
State	Published - 3 Jun 2015
Event	2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015 - Hsinchu, Taiwan Duration: 27 Apr 2015 → 29 Apr 2015

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
Volume	2015-June
ISSN (Print)	1930-8868

Conference

Conference	2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
Country/Territory	Taiwan
City	Hsinchu
Period	27/04/15 → 29/04/15

Access to Document

10.1109/VLSI-TSA.2015.7117588

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Yu, K. C., Fan, M. L., Su, P., & Chuang, C. T. (2015). Analysis of monolithic 3D 6T SRAM using ultra-thin-body InGaAs/Ge MOSFETs considering interlayer coupling. In 2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015 Article 7117588 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings; Vol. 2015-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2015.7117588

Yu, Kuan Chin ; Fan, Ming Long ; Su, Pin et al. / Analysis of monolithic 3D 6T SRAM using ultra-thin-body InGaAs/Ge MOSFETs considering interlayer coupling. 2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015. Institute of Electrical and Electronics Engineers Inc., 2015. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

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title = "Analysis of monolithic 3D 6T SRAM using ultra-thin-body InGaAs/Ge MOSFETs considering interlayer coupling",

abstract = "TCAD analysis results indicate that the cell robustness and performance of InGaAs-n/Ge-p 6T SRAM can be improved simultaneously with interlayer coupling through optimized monolithic 3D layout design. We suggest two layout designs for high performance and low power operation, respectively. Moreover, with optimized layout designs, InGaAs/Ge 6T SRAM exhibits larger Read access time and Time-to-Write improvement compared with Si-based counterparts.",

author = "Yu, {Kuan Chin} and Fan, {Ming Long} and Pin Su and Chuang, {Ching Te}",

year = "2015",

month = jun,

day = "3",

doi = "10.1109/VLSI-TSA.2015.7117588",

language = "English",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015",

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note = "2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015 ; Conference date: 27-04-2015 Through 29-04-2015",

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Yu, KC, Fan, ML, Su, P & Chuang, CT 2015, Analysis of monolithic 3D 6T SRAM using ultra-thin-body InGaAs/Ge MOSFETs considering interlayer coupling. in 2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015., 7117588, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, vol. 2015-June, Institute of Electrical and Electronics Engineers Inc., 2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015, Hsinchu, Taiwan, 27/04/15. https://doi.org/10.1109/VLSI-TSA.2015.7117588

Analysis of monolithic 3D 6T SRAM using ultra-thin-body InGaAs/Ge MOSFETs considering interlayer coupling. / Yu, Kuan Chin; Fan, Ming Long; Su, Pin et al.
2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7117588 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings; Vol. 2015-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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PY - 2015/6/3

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N2 - TCAD analysis results indicate that the cell robustness and performance of InGaAs-n/Ge-p 6T SRAM can be improved simultaneously with interlayer coupling through optimized monolithic 3D layout design. We suggest two layout designs for high performance and low power operation, respectively. Moreover, with optimized layout designs, InGaAs/Ge 6T SRAM exhibits larger Read access time and Time-to-Write improvement compared with Si-based counterparts.

AB - TCAD analysis results indicate that the cell robustness and performance of InGaAs-n/Ge-p 6T SRAM can be improved simultaneously with interlayer coupling through optimized monolithic 3D layout design. We suggest two layout designs for high performance and low power operation, respectively. Moreover, with optimized layout designs, InGaAs/Ge 6T SRAM exhibits larger Read access time and Time-to-Write improvement compared with Si-based counterparts.

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M3 - Conference contribution

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T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

BT - 2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015

PB - Institute of Electrical and Electronics Engineers Inc.

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Yu KC, Fan ML, Su P, Chuang CT. Analysis of monolithic 3D 6T SRAM using ultra-thin-body InGaAs/Ge MOSFETs considering interlayer coupling. In 2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7117588. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VLSI-TSA.2015.7117588

Analysis of monolithic 3D 6T SRAM using ultra-thin-body InGaAs/Ge MOSFETs considering interlayer coupling

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