Analysis of marker motion in thin-film silicide formation

King-Ning Tu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

36 Scopus citations


A simple analysis of marker motion in the growth of a single compound layer is given. It has been applied to the growth of Ni 2 Si silicide between Ni thin films and Si wafers. In the silicide Ni was found to be the dominant diffusing species by the use of implanted Xe markers. The intrinsic diffusivities of Ni and Si in Ni 2 Si at 325 °C have been determined; D Ni =1.7×10 -14 cm 2 /sec and D Si =0.6×10 -14 cm 2 /sec. These are the first measurements of intrinsic diffusivities in thin-film silicides.

Original languageEnglish
Pages (from-to)3379-3382
Number of pages4
JournalJournal of Applied Physics
Issue number8
StatePublished - 1 Dec 1977


Dive into the research topics of 'Analysis of marker motion in thin-film silicide formation'. Together they form a unique fingerprint.

Cite this