A simple analysis of marker motion in the growth of a single compound layer is given. It has been applied to the growth of Ni 2 Si silicide between Ni thin films and Si wafers. In the silicide Ni was found to be the dominant diffusing species by the use of implanted Xe markers. The intrinsic diffusivities of Ni and Si in Ni 2 Si at 325 °C have been determined; D Ni =1.7×10 -14 cm 2 /sec and D Si =0.6×10 -14 cm 2 /sec. These are the first measurements of intrinsic diffusivities in thin-film silicides.
|Number of pages||4|
|Journal||Journal of Applied Physics|
|State||Published - 1 Dec 1977|